Bourns IGBT 600 V TO-252

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Subtotal 50 units (supplied on a continuous strip)*

PHP4,297.00

(exc. VAT)

PHP4,812.50

(inc. VAT)

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  • 2,430 unit(s) ready to ship from another location
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Units
Per Unit
50 - 95PHP85.94
100 - 245PHP80.784
250 - 995PHP73.512
1000 +PHP64.692

*price indicative

Packaging Options:
RS Stock No.:
253-3500P
Mfr. Part No.:
BIDD05N60T
Manufacturer:
Bourns
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Brand

Bourns

Product Type

IGBT

Maximum Collector Emitter Voltage Vceo

600V

Maximum Power Dissipation Pd

82W

Package Type

TO-252

Maximum Gate Emitter Voltage VGEO

±30 V

Maximum Collector Emitter Saturation Voltage VceSAT

2V

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

150°C

Standards/Approvals

RoHS Compliant

Series

BIDD05N60T

Automotive Standard

No

The Bourns IGBT device combines technology from a MOS gate and a bipolar transistor for an optimum component for high voltage and high current applications. This device uses Trench-Gate Field-Stop technology providing greater control of dynamic characteristics with a lower Collector-Emitter Saturation Voltage (VCE(sat)) and fewer switching losses. In addition, this structure improves the robustness of the device.

600V, 5A, Low VCE(sat)

Trench-Gate Field-Stop technology

Optimized for conduction

Robust

RoHS compliant

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