Bourns BIDD05N60T Single Diode IGBT, 5 A 600 V TO-252
- RS Stock No.:
- 253-3499
- Mfr. Part No.:
- BIDD05N60T
- Manufacturer:
- Bourns
Subtotal (1 reel of 2500 units)*
PHP112,462.50
(exc. VAT)
PHP125,957.50
(inc. VAT)
FREE delivery for orders over ₱3,000.00
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- Shipping from May 11, 2026
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Units | Per Unit | Per Reel* |
|---|---|---|
| 2500 + | PHP44.985 | PHP112,462.50 |
*price indicative
- RS Stock No.:
- 253-3499
- Mfr. Part No.:
- BIDD05N60T
- Manufacturer:
- Bourns
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Bourns | |
| Maximum Continuous Collector Current | 5 A | |
| Maximum Collector Emitter Voltage | 600 V | |
| Maximum Gate Emitter Voltage | ±30V | |
| Number of Transistors | 1 | |
| Maximum Power Dissipation | 82 W | |
| Configuration | Single Diode | |
| Package Type | TO-252 | |
| Select all | ||
|---|---|---|
Brand Bourns | ||
Maximum Continuous Collector Current 5 A | ||
Maximum Collector Emitter Voltage 600 V | ||
Maximum Gate Emitter Voltage ±30V | ||
Number of Transistors 1 | ||
Maximum Power Dissipation 82 W | ||
Configuration Single Diode | ||
Package Type TO-252 | ||
The Bourns IGBT device combines technology from a MOS gate and a bipolar transistor for an optimum component for high voltage and high current applications. This device uses Trench-Gate Field-Stop technology providing greater control of dynamic characteristics with a lower Collector-Emitter Saturation Voltage (VCE(sat)) and fewer switching losses. In addition, this structure improves the robustness of the device.
600V, 5A, Low VCE(sat)
Trench-Gate Field-Stop technology
Optimized for conduction
Robust
RoHS compliant
Trench-Gate Field-Stop technology
Optimized for conduction
Robust
RoHS compliant
For these non-cancellable (NC), and non-returnable (NR) products, Terms and Conditions apply.
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