Bourns BIDW20N60T Single Diode IGBT, 20 A 600 V TO-247

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Subtotal (1 pack of 2 units)*

PHP338.69

(exc. VAT)

PHP379.332

(inc. VAT)

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  • Plus 2,196 unit(s) shipping from December 22, 2025
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Units
Per Unit
Per Pack*
2 - 8PHP169.345PHP338.69
10 - 48PHP152.235PHP304.47
50 - 98PHP144.11PHP288.22
100 - 248PHP125.26PHP250.52
250 +PHP122.655PHP245.31

*price indicative

Packaging Options:
RS Stock No.:
253-3505
Mfr. Part No.:
BIDW20N60T
Manufacturer:
Bourns
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Brand

Bourns

Maximum Continuous Collector Current

20 A

Maximum Collector Emitter Voltage

600 V

Maximum Gate Emitter Voltage

±20V

Maximum Power Dissipation

192 W

Number of Transistors

1

Configuration

Single Diode

Package Type

TO-247

The Bourns IGBT device combines technology from a MOS gate and a bipolar transistor for an optimum component for high voltage and high current applications. This device uses Trench-Gate Field-Stop technology providing greater control of dynamic characteristics with a lower conduction loss and fewer switching losses. In addition, this structure provides a positive temperature coefficient.

600 V, 20 A, Low Collector-Emitter Saturation Voltage (VCE(sat))
Trench-Gate Field-Stop technology
Optimized for conduction
Low switching loss
RoHS compliant

For these non-cancellable (NC), and non-returnable (NR) products, Terms and Conditions apply.


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