Infineon IKW50N65RH5XKSA1 Single IGBT Transistor Module, 50 A 650 V PG-TO247-3

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PHP328.28

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PHP367.67

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5 - 9PHP295.54
10 - 14PHP265.99
15 - 19PHP239.16
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Packaging Options:
RS Stock No.:
249-6941
Mfr. Part No.:
IKW50N65RH5XKSA1
Manufacturer:
Infineon
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Brand

Infineon

Maximum Continuous Collector Current

50 A

Maximum Collector Emitter Voltage

650 V

Maximum Gate Emitter Voltage

15V

Maximum Power Dissipation

305 W

Number of Transistors

2

Package Type

PG-TO247-3

Configuration

Single

The Infineon TRENCHSTOP5 H5 IGBT co-packed with half-rated 6th generation CoolSiCTM schottky barrier diode. Ultra-low switching losses due to the combination of TRENCHSTOPTM5 and CoolSiCTM technology. Benchmark efficiency in hard switching topologies. Plug-and-play replacement of pure silicon devices. Maximum junction temperature is 175°C

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