onsemi IGBT Module 1000 V Q2BOOST-PIM53, Surface
- RS Stock No.:
- 245-6969P
- Mfr. Part No.:
- NXH300B100H4Q2F2PG
- Manufacturer:
- onsemi
This image is representative of the product range
Currently unavailable
We don't know if this item will be back in stock, RS intend to remove it from our range soon.
- RS Stock No.:
- 245-6969P
- Mfr. Part No.:
- NXH300B100H4Q2F2PG
- Manufacturer:
- onsemi
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | onsemi | |
| Product Type | IGBT Module | |
| Maximum Collector Emitter Voltage Vceo | 1000V | |
| Maximum Power Dissipation Pd | 79W | |
| Number of Transistors | 6 | |
| Package Type | Q2BOOST-PIM53 | |
| Mount Type | Surface | |
| Maximum Gate Emitter Voltage VGEO | 20 V | |
| Minimum Operating Temperature | -40°C | |
| Maximum Operating Temperature | 150°C | |
| Width | 47.3mm | |
| Length | 93.1mm | |
| Height | 17.7mm | |
| Series | NXH300B100H4Q2F2PG | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand onsemi | ||
Product Type IGBT Module | ||
Maximum Collector Emitter Voltage Vceo 1000V | ||
Maximum Power Dissipation Pd 79W | ||
Number of Transistors 6 | ||
Package Type Q2BOOST-PIM53 | ||
Mount Type Surface | ||
Maximum Gate Emitter Voltage VGEO 20 V | ||
Minimum Operating Temperature -40°C | ||
Maximum Operating Temperature 150°C | ||
Width 47.3mm | ||
Length 93.1mm | ||
Height 17.7mm | ||
Series NXH300B100H4Q2F2PG | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
The ON Semiconductor Q2BOOST Module is a high−density, integrated power module combines high performance IGBTs with 1200 V SiC diode.
Extremely Efficient Trench with field stop technology
Low switching loss reduces system power dissipation
Module design offers high power density
Low inductive layout
3 channel in Q2BOOST package
These are Pb free device
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