Infineon FS150R12KT4B11BOSA1 IGBT Module, 150 A 1200 V

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Subtotal (1 unit)*

PHP11,104.69

(exc. VAT)

PHP12,437.25

(inc. VAT)

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1 - 1PHP11,104.69
2 - 2PHP10,882.71
3 - 3PHP10,664.73
4 - 4PHP10,451.44
5 +PHP10,242.84

*price indicative

Packaging Options:
RS Stock No.:
244-5408
Mfr. Part No.:
FS150R12KT4B11BOSA1
Manufacturer:
Infineon
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Brand

Infineon

Maximum Continuous Collector Current

150 A

Maximum Collector Emitter Voltage

1200 V

Maximum Gate Emitter Voltage

+/-20V

Maximum Power Dissipation

750 W

Number of Transistors

6

The infineon IGBT module the maximum rated repetitive peak collector current is 300 A and collector-emitter saturation voltag 2.10 V, gate threshold voltage is 6.4 V.

Collector-emitter cut-off current 1.0 mA
Temperature under switching conditions 150° C
Gate-emitter leakage current 100 nA
Reverse transfer capacitance 0.35 nF

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