Infineon IGP20N65H5XKSA1 Single IGBT, 42 A 650 V TO-220-3

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Subtotal (1 pack of 2 units)*

PHP275.18

(exc. VAT)

PHP308.20

(inc. VAT)

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Units
Per Unit
Per Pack*
2 - 8PHP137.59PHP275.18
10 - 98PHP130.715PHP261.43
100 - 248PHP124.195PHP248.39
250 - 498PHP118.04PHP236.08
500 +PHP112.24PHP224.48

*price indicative

Packaging Options:
RS Stock No.:
242-0978
Mfr. Part No.:
IGP20N65H5XKSA1
Manufacturer:
Infineon
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Brand

Infineon

Maximum Continuous Collector Current

42 A

Maximum Collector Emitter Voltage

650 V

Maximum Gate Emitter Voltage

20V

Number of Transistors

1

Maximum Power Dissipation

125 W

Package Type

TO-220-3

Configuration

Single

The Infineon IGBT trasistor has a 650 V breakthrough voltage.The maximum junction temperature of transistor is 175°C.

Best-in-Class efficiency in hard switching and resonant topologies
Plug and play replacement of previous generation IGBTs
Applicable in Solar converters , Uninterruptible power supplies, Welding converters
Mid to high range switching frequency converters

For these non-cancellable (NC), and non-returnable (NR) products, Terms and Conditions apply.


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