Infineon AIKW50N65RF5XKSA1 IGBT, 80 A 650 V, 3-Pin PG-TO247-3

Bulk discount available

Subtotal (1 unit)*

PHP554.40

(exc. VAT)

PHP620.93

(inc. VAT)

Add to Basket
Select or type quantity
In Stock
  • 614 unit(s) ready to ship from another location
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units
Per Unit
1 - 9PHP554.40
10 - 99PHP508.00
100 - 249PHP468.57
250 - 499PHP434.92
500 +PHP423.31

*price indicative

Packaging Options:
RS Stock No.:
228-6510
Mfr. Part No.:
AIKW50N65RF5XKSA1
Manufacturer:
Infineon
Find similar products by selecting one or more attributes.
Select all

Brand

Infineon

Maximum Continuous Collector Current

80 A

Maximum Collector Emitter Voltage

650 V

Maximum Gate Emitter Voltage

±20.0V

Maximum Power Dissipation

250 W

Package Type

PG-TO247-3

Pin Count

3

Transistor Configuration

Single

The Infineon AIKW50N65RF5 is hybrid power discrete with SiC power technology with best cost-performance is the most important aspect for auxiliary applications in electric vehicles and hybrid vehicles. The hybrid of 650V TRENCHSTOP 5 AUTO fast switching IGBT and CoolSiC Schottky diode to enable a cost efficient performance boost for fast switching automotive applications such as on board charger, PFC, DC-DC and DC-AC.

Trenchstop 5 fast switching IGBT
Best in class efficiency in hard switching and resonant topologies
Low gate charge QG
Maximum junction temperature 175°C

For these non-cancellable (NC), and non-returnable (NR) products, Terms and Conditions apply.


Related links