Infineon IKP39N65ES5XKSA1 Single IGBT, 62 A 650 V, 3-Pin PG-TO220

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Subtotal (1 pack of 5 units)*

PHP1,121.12

(exc. VAT)

PHP1,255.655

(inc. VAT)

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5 +PHP224.224PHP1,121.12

*price indicative

Packaging Options:
RS Stock No.:
226-6105
Mfr. Part No.:
IKP39N65ES5XKSA1
Manufacturer:
Infineon
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Brand

Infineon

Maximum Continuous Collector Current

62 A

Maximum Collector Emitter Voltage

650 V

Maximum Gate Emitter Voltage

30V

Number of Transistors

1

Maximum Power Dissipation

188 W

Package Type

PG-TO220

Configuration

Single

Channel Type

N

Pin Count

3

Transistor Configuration

Single

The Infineon IKP39N65ES5 has highest power density in TO-220 footprint and no need for gate clamping component. In this soft current fall characteristics with no tail current and it is excellent for paralleling.

Very low VCEsat of 1.45 V at 25°C
4 times Ic pulse current (100°C Tc)
Maximum junction temperature Tvj 175°C

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