Infineon FF600R12ME4B72BOSA1, N-Channel IGBT Module, 600 A 1200 V, 11-Pin ECONODUAL, Surface
- RS Stock No.:
- 218-4341
- Mfr. Part No.:
- FF600R12ME4B72BOSA1
- Manufacturer:
- Infineon
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PHP14,863.95
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PHP16,647.62
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Units | Per Unit |
|---|---|
| 1 - 9 | PHP14,863.95 |
| 10 - 99 | PHP14,418.02 |
| 100 - 249 | PHP13,841.30 |
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| 500 + | PHP12,360.27 |
*price indicative
- RS Stock No.:
- 218-4341
- Mfr. Part No.:
- FF600R12ME4B72BOSA1
- Manufacturer:
- Infineon
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | IGBT Module | |
| Maximum Continuous Collector Current Ic | 600A | |
| Maximum Collector Emitter Voltage Vceo | 1200V | |
| Maximum Power Dissipation Pd | 20mW | |
| Number of Transistors | 2 | |
| Package Type | ECONODUAL | |
| Mount Type | Surface | |
| Channel Type | N | |
| Pin Count | 11 | |
| Maximum Collector Emitter Saturation Voltage VceSAT | 2.1V | |
| Maximum Gate Emitter Voltage VGEO | 20 V | |
| Minimum Operating Temperature | -40°C | |
| Maximum Operating Temperature | 150°C | |
| Width | 62mm | |
| Series | FF600R12ME4_B72 | |
| Standards/Approvals | No | |
| Height | 20.8mm | |
| Length | 152mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type IGBT Module | ||
Maximum Continuous Collector Current Ic 600A | ||
Maximum Collector Emitter Voltage Vceo 1200V | ||
Maximum Power Dissipation Pd 20mW | ||
Number of Transistors 2 | ||
Package Type ECONODUAL | ||
Mount Type Surface | ||
Channel Type N | ||
Pin Count 11 | ||
Maximum Collector Emitter Saturation Voltage VceSAT 2.1V | ||
Maximum Gate Emitter Voltage VGEO 20 V | ||
Minimum Operating Temperature -40°C | ||
Maximum Operating Temperature 150°C | ||
Width 62mm | ||
Series FF600R12ME4_B72 | ||
Standards/Approvals No | ||
Height 20.8mm | ||
Length 152mm | ||
Automotive Standard No | ||
Infineon FF600R12ME4_B72 Series IGBT Module, 1200V Collector-Emitter Voltage, 600A Collector Current - FF600R12ME4B72BOSA1
Features and Benefits:
• 600 A continuous collector current enables heavy-load handling
• Low VCE(sat) 2.1 V reduces conduction losses during operation
• 20 mW maximum power dissipation minimises internal power loss
• Type N gate-emitter 20 V rating allows standard gate-drive voltages
• Dual-transistor configuration supports half-bridge and inverter topologies
Applications
• Used with high-voltage inverter systems in industry
• Ideal for heavy-current converter modules
• Can be used for power supplies requiring robust switching
• Suitable for traction and large-drive requiring dual switches
What pin configuration does it use for PCB integration?
What are the allowable ambient temperature limits for operation?
How many transistors are incorporated and what topology does that support?
What physical size should I allow for in the assembly layout?
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- Semikron Danfoss SEMiX603GB12E4p 1.1 kA 1200 V Surface
- Mitsubishi Electric CM450DX -24T #300G 450 A 1200 V PCB
- Semikron Danfoss SEMiX303GB12E4p 469 A 1200 V Surface
