STMicroelectronics STGF20H65DFB2, Type N-Channel IGBT, 40 A 650 V, 3-Pin TO-220FP, Through Hole

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Subtotal 10 units (supplied in a tube)*

PHP1,280.40

(exc. VAT)

PHP1,434.00

(inc. VAT)

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  • 20 unit(s) ready to ship from another location
  • Plus 50 unit(s) shipping from October 07, 2026
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Units
Per Unit
10 - 20PHP128.04
25 +PHP125.476

*price indicative

Packaging Options:
RS Stock No.:
204-9872P
Mfr. Part No.:
STGF20H65DFB2
Manufacturer:
STMicroelectronics
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Brand

STMicroelectronics

Maximum Continuous Collector Current Ic

40A

Product Type

IGBT

Maximum Collector Emitter Voltage Vceo

650V

Maximum Power Dissipation Pd

45W

Package Type

TO-220FP

Mount Type

Through Hole

Channel Type

Type N

Pin Count

3

Switching Speed

1MHz

Minimum Operating Temperature

-55°C

Maximum Collector Emitter Saturation Voltage VceSAT

2.1V

Maximum Gate Emitter Voltage VGEO

20 V

Maximum Operating Temperature

175°C

Height

4.6mm

Series

STG

Standards/Approvals

RoHS

Length

10.4mm

Automotive Standard

No

COO (Country of Origin):
CN
The STMicroelectronics IGBT 650 V HB2 series represents an evolution of the advanced proprietary trench gate field-stop structure. The performance of the HB2 series is optimized in terms of conduction, thanks to a better VCE(sat) behaviour at low current values, as well as in terms of reduced switching energy.

Maximum junction temperature : TJ = 175 °C

Low VCE(sat) = 1.65 V (typ.) @ IC = 20 A

Very fast and soft recovery co-packaged diode

Minimized tail current

Tight parameter distribution

Low thermal resistance

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