STMicroelectronics STGB30H65DFB2 IGBT, 50 A 650 V, 3-Pin D2PAK (TO-263)

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Subtotal (1 pack of 5 units)*

PHP603.68

(exc. VAT)

PHP676.12

(inc. VAT)

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Units
Per Unit
Per Pack*
5 - 45PHP120.736PHP603.68
50 - 95PHP118.322PHP591.61
100 - 245PHP115.956PHP579.78
250 - 495PHP113.636PHP568.18
500 +PHP111.362PHP556.81

*price indicative

Packaging Options:
RS Stock No.:
204-9868
Mfr. Part No.:
STGB30H65DFB2
Manufacturer:
STMicroelectronics
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Brand

STMicroelectronics

Maximum Continuous Collector Current

50 A

Maximum Collector Emitter Voltage

650 V

Maximum Gate Emitter Voltage

±20V

Number of Transistors

1

Maximum Power Dissipation

167 W

Package Type

D2PAK (TO-263)

Pin Count

3

COO (Country of Origin):
CN
The STMicroelectronics IGBT 650 V HB2 series represents an evolution of the advanced proprietary trench gate field-stop structure. The performance of the HB2 series is optimized in terms of conduction, thanks to a better VCE(sat) behaviour at low current values, as well as in terms of reduced switching energy.

Maximum junction temperature : TJ = 175 °C
Low VCE(sat) = 1.65 V (typ.) @ IC = 30 A
Very fast and soft recovery co-packaged diode
Minimized tail current
Tight parameter distribution

For these non-cancellable (NC), and non-returnable (NR) products, Terms and Conditions apply.


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