Name: STMicroelectronics STGWA40H65DFB2 IGBT, 40 A 650 V, 3-Pin TO-247
Brand: STMicroelectronics
SKU: 202-5517
Price: 255.48 PHP
Availability: Discontinued

Specifications

Technical data sheets

Legislation and Compliance

Product Details

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	STMicroelectronics
	Maximum Continuous Collector Current	40 A
	Maximum Collector Emitter Voltage	650 V
	Maximum Gate Emitter Voltage	±20V
	Number of Transistors	1
	Maximum Power Dissipation	230 W
	Package Type	TO-247
	Channel Type	N
	Pin Count	3
	Transistor Configuration	Common Emitter

	Select all
	Brand STMicroelectronics
	Maximum Continuous Collector Current 40 A
	Maximum Collector Emitter Voltage 650 V
	Maximum Gate Emitter Voltage ±20V
	Number of Transistors 1
	Maximum Power Dissipation 230 W
	Package Type TO-247
	Channel Type N
	Pin Count 3
	Transistor Configuration Common Emitter

Datasheet - STGWA40H65DFB2

The STMicroelectronics high-speed HB2 series IGBT represents an evolution of the advanced proprietary trench gate field-stop structure. The performance of the HB2 series is optimized in terms of conduction, thanks to a better VCE(sat) behaviour at low current values, as well as in terms of reduced switching energy.

Tight parameter distribution
Low thermal resistance
Positive VCE(sat) temperature coefficient

STMicroelectronics STGWA40H65DFB2 IGBT, 40 A 650 V, 3-Pin TO-247

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