onsemi, N-Channel IGBT, 80 A 650 V, 3-Pin TO-263, Surface

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Subtotal 20 units (supplied on a continuous strip)*

PHP5,483.60

(exc. VAT)

PHP6,141.60

(inc. VAT)

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Supply shortage
  • Plus 3,124 left, shipping from September 11, 2026
Our current stock is limited and our suppliers are expecting shortages.

Units
Per Unit
20 - 198PHP274.18
200 - 498PHP236.27
500 - 998PHP217.46
1000 +PHP198.765

*price indicative

Packaging Options:
RS Stock No.:
185-8642P
Mfr. Part No.:
AFGB40T65SQDN
Manufacturer:
onsemi
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Brand

onsemi

Maximum Continuous Collector Current Ic

80A

Product Type

IGBT

Maximum Collector Emitter Voltage Vceo

650V

Maximum Power Dissipation Pd

238W

Package Type

TO-263

Mount Type

Surface

Channel Type

N

Pin Count

3

Maximum Gate Emitter Voltage VGEO

±20 V

Minimum Operating Temperature

-55°C

Maximum Collector Emitter Saturation Voltage VceSAT

1.6V

Maximum Operating Temperature

175°C

Width

10.67mm

Standards/Approvals

RoHS, Pb-Free

Height

4.06mm

Length

9.65mm

Energy Rating

22.3mJ

Automotive Standard

AEC-Q101

Non Compliant

COO (Country of Origin):
CN
Using the novel field stop 4th generation IGBT technology. AFGB40T65SQDN offers the optimum performance with both low conduction loss and switching loss for a high efficiency operation in various applications.

VCE(sat) = 1.6 V (typ.) @ IC = 40 A

Low VF soft recovery co-packaged diode

For automotive

Low conduction loss

Low noise and conduction loss

Applications

Automotive On Board Charge

Automotive DC/DC converter for HEV

End Products

EV/PHEV

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