onsemi FGH75T65SQDNL4, Type P-Channel IGBT, 75 A 650 V, 4-Pin TO-247, Through Hole
- RS Stock No.:
- 181-1864
- Mfr. Part No.:
- FGH75T65SQDNL4
- Manufacturer:
- onsemi
This image is representative of the product range
Bulk discount available
View bulk pricing optionsSubtotal (1 tube of 450 units)*
PHP187,985.70
(exc. VAT)
PHP210,544.20
(inc. VAT)
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Units | Per Unit | Per Tube* |
|---|---|---|
| 450 - 450 | PHP417.746 | PHP187,985.70 |
| 900 + | PHP405.213 | PHP182,345.85 |
*price indicative
- RS Stock No.:
- 181-1864
- Mfr. Part No.:
- FGH75T65SQDNL4
- Manufacturer:
- onsemi
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | onsemi | |
| Maximum Continuous Collector Current Ic | 75A | |
| Product Type | IGBT | |
| Maximum Collector Emitter Voltage Vceo | 650V | |
| Maximum Power Dissipation Pd | 375W | |
| Package Type | TO-247 | |
| Mount Type | Through Hole | |
| Channel Type | Type P | |
| Pin Count | 4 | |
| Switching Speed | 1MHz | |
| Maximum Collector Emitter Saturation Voltage VceSAT | 1.43V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Emitter Voltage VGEO | 20 V | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | Pb-Free, Halide Free | |
| Series | Field Stop IV | |
| Automotive Standard | No | |
| Energy Rating | 160mJ | |
| Select all | ||
|---|---|---|
Brand onsemi | ||
Maximum Continuous Collector Current Ic 75A | ||
Product Type IGBT | ||
Maximum Collector Emitter Voltage Vceo 650V | ||
Maximum Power Dissipation Pd 375W | ||
Package Type TO-247 | ||
Mount Type Through Hole | ||
Channel Type Type P | ||
Pin Count 4 | ||
Switching Speed 1MHz | ||
Maximum Collector Emitter Saturation Voltage VceSAT 1.43V | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Emitter Voltage VGEO 20 V | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals Pb-Free, Halide Free | ||
Series Field Stop IV | ||
Automotive Standard No | ||
Energy Rating 160mJ | ||
- COO (Country of Origin):
- CN
This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop IV Trench construction, and provides superior performance in demanding switching applications, offering both low on state voltage and minimal switching loss. In addition, this new device is packaged in a TO−247−4L package that provides significant reduction in Eon Losses compared to standard TO−247−3L package. The IGBT is well suited for UPS and solar applications. Incorporated into the device is a soft and fast co−packaged free wheeling diode with a low forward voltage.
Extremely Efficient Trench with Field Stop Technology
TJmax = 175°C
Improved Gate Control Lowers Switching Losses
Separate Emitter Drive Pin
TO-247-4L for Minimal Eon Losses
Optimized for High Speed Switching
These are Pb-Free Devices
Solar Inverter
Uninterruptible Power Inverter Supplies
Neutral Point Clamp Topology