onsemi, Type P-Channel IGBT, 60 A 650 V, 3-Pin TO-247 G03, Through Hole
- RS Stock No.:
- 178-4627P
- Mfr. Part No.:
- FGH60T65SQD-F155
- Manufacturer:
- onsemi
This image is representative of the product range
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View bulk pricing optionsSubtotal 10 units (supplied in a tube)*
PHP3,676.55
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PHP4,117.74
(inc. VAT)
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In Stock
- 390 unit(s) ready to ship from another location
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Units | Per Unit |
|---|---|
| 10 - 18 | PHP367.655 |
| 20 + | PHP356.63 |
*price indicative
- RS Stock No.:
- 178-4627P
- Mfr. Part No.:
- FGH60T65SQD-F155
- Manufacturer:
- onsemi
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | onsemi | |
| Product Type | IGBT | |
| Maximum Continuous Collector Current Ic | 60A | |
| Maximum Collector Emitter Voltage Vceo | 650V | |
| Maximum Power Dissipation Pd | 333W | |
| Package Type | TO-247 G03 | |
| Mount Type | Through Hole | |
| Channel Type | Type P | |
| Pin Count | 3 | |
| Maximum Gate Emitter Voltage VGEO | ±30 V | |
| Maximum Collector Emitter Saturation Voltage VceSAT | 1.6V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 175°C | |
| Series | Field Stop 4th Generation | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| Energy Rating | 50mJ | |
| Select all | ||
|---|---|---|
Brand onsemi | ||
Product Type IGBT | ||
Maximum Continuous Collector Current Ic 60A | ||
Maximum Collector Emitter Voltage Vceo 650V | ||
Maximum Power Dissipation Pd 333W | ||
Package Type TO-247 G03 | ||
Mount Type Through Hole | ||
Channel Type Type P | ||
Pin Count 3 | ||
Maximum Gate Emitter Voltage VGEO ±30 V | ||
Maximum Collector Emitter Saturation Voltage VceSAT 1.6V | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 175°C | ||
Series Field Stop 4th Generation | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
Energy Rating 50mJ | ||
- COO (Country of Origin):
- CN
Using novel field stop IGBT technology, ON semiconductor’s new series of field stop 4th generation IGBTs offer the optimum performance for solar inverter, UPS, welder, telecom, ESS and PFC applications where low conduction and switching losses are essential.
Maximum Junction Temperature: TJ =175°C
Positive Temperature Co-efficient for Easy Parallel Operating
High Current Capability
Low Saturation Voltage: VCE(sat) =1.6 V(Typ.) @ IC = 60 A
High Input Impedance
Fast Switching
Tighten Parameter Distribution
Applications
Solar Inverter, UPS, Welder, Telecom, ESS, PFC
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