Toshiba GT15J341 IGBT, 15 A 600 V, 3-Pin TO-220SIS, Through Hole

This image is representative of the product range

View all IGBTs
Currently unavailable
We don't know if this item will be back in stock, RS intend to remove it from our range soon.
RS Stock No.:
168-7763
Mfr. Part No.:
GT15J341
Manufacturer:
Toshiba
Find similar products by selecting one or more attributes.
Select all

Brand

Toshiba

Maximum Continuous Collector Current

15 A

Maximum Collector Emitter Voltage

600 V

Maximum Gate Emitter Voltage

±25V

Maximum Power Dissipation

30 W

Package Type

TO-220SIS

Mounting Type

Through Hole

Channel Type

N

Pin Count

3

Switching Speed

100kHz

Transistor Configuration

Single

Dimensions

10 x 4.5 x 15mm

Maximum Operating Temperature

+150 °C

COO (Country of Origin):
JP

IGBT Discretes, Toshiba


For these non-cancellable (NC), and non-returnable (NR) products, Terms and Conditions apply.



IGBT Discretes & Modules, Toshiba


The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.

Related links