Renesas Electronics RJH65T04BDPM-A0#T2, P-Channel IGBT, 60 A 650 V, 3-Pin TO-3PFP, Through Hole
- RS Stock No.:
- 168-2480P
- Mfr. Part No.:
- RJH65T04BDPM-A0#T2
- Manufacturer:
- Renesas Electronics
Bulk discount available
Subtotal 10 units (supplied in a tube)*
PHP2,240.10
(exc. VAT)
PHP2,508.90
(inc. VAT)
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Units | Per Unit |
|---|---|
| 10 - 18 | PHP224.01 |
| 20 - 48 | PHP207.775 |
| 50 - 98 | PHP193.735 |
| 100 + | PHP181.475 |
*price indicative
- RS Stock No.:
- 168-2480P
- Mfr. Part No.:
- RJH65T04BDPM-A0#T2
- Manufacturer:
- Renesas Electronics
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Renesas Electronics | |
| Maximum Continuous Collector Current | 60 A | |
| Maximum Collector Emitter Voltage | 650 V | |
| Maximum Gate Emitter Voltage | ±30V | |
| Maximum Power Dissipation | 65 W | |
| Number of Transistors | 1 | |
| Package Type | TO-3PFP | |
| Mounting Type | Through Hole | |
| Channel Type | P | |
| Pin Count | 3 | |
| Switching Speed | 1MHz | |
| Dimensions | 15.5 x 5.5 x 26.5mm | |
| Energy Rating | 1.1mJ | |
| Maximum Operating Temperature | +175 °C | |
| Gate Capacitance | 1760pF | |
| Select all | ||
|---|---|---|
Brand Renesas Electronics | ||
Maximum Continuous Collector Current 60 A | ||
Maximum Collector Emitter Voltage 650 V | ||
Maximum Gate Emitter Voltage ±30V | ||
Maximum Power Dissipation 65 W | ||
Number of Transistors 1 | ||
Package Type TO-3PFP | ||
Mounting Type Through Hole | ||
Channel Type P | ||
Pin Count 3 | ||
Switching Speed 1MHz | ||
Dimensions 15.5 x 5.5 x 26.5mm | ||
Energy Rating 1.1mJ | ||
Maximum Operating Temperature +175 °C | ||
Gate Capacitance 1760pF | ||
IGBT product series for Power Factor Correction (PFC), UPS, solar power generation, and welding applications, recommended for 50 to 100 kHz frequencies, and not guaranteed against short circuit.
Low collector to emitter saturation voltage
VCE(sat) = 1.5 V typ. (at IC = 30 A, VGE = 15 V, Ta = 25°C)
Built in fast recovery diode in one package
Trench gate and thin wafer technology
High speed switching
tf = 45 ns typ. (at VCC = 400 V, VGE = 15 V, IC = 30 A, Rg = 10 , Ta=25°C , inductive load)
Operation frequency (20kHz ≤ f ˂ 40kHz)
VCE(sat) = 1.5 V typ. (at IC = 30 A, VGE = 15 V, Ta = 25°C)
Built in fast recovery diode in one package
Trench gate and thin wafer technology
High speed switching
tf = 45 ns typ. (at VCC = 400 V, VGE = 15 V, IC = 30 A, Rg = 10 , Ta=25°C , inductive load)
Operation frequency (20kHz ≤ f ˂ 40kHz)
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