Renesas Electronics RJH65T04BDPM-A0#T2, P-Channel IGBT, 60 A 650 V, 3-Pin TO-3PFP, Through Hole
- RS Stock No.:
- 168-2480P
- Mfr. Part No.:
- RJH65T04BDPM-A0#T2
- Manufacturer:
- Renesas Electronics
Unavailable
RS will no longer stock this product.
- RS Stock No.:
- 168-2480P
- Mfr. Part No.:
- RJH65T04BDPM-A0#T2
- Manufacturer:
- Renesas Electronics
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Renesas Electronics | |
| Maximum Continuous Collector Current | 60 A | |
| Maximum Collector Emitter Voltage | 650 V | |
| Maximum Gate Emitter Voltage | ±30V | |
| Number of Transistors | 1 | |
| Maximum Power Dissipation | 65 W | |
| Package Type | TO-3PFP | |
| Mounting Type | Through Hole | |
| Channel Type | P | |
| Pin Count | 3 | |
| Switching Speed | 1MHz | |
| Dimensions | 15.5 x 5.5 x 26.5mm | |
| Maximum Operating Temperature | +175 °C | |
| Gate Capacitance | 1760pF | |
| Energy Rating | 1.1mJ | |
| Select all | ||
|---|---|---|
Brand Renesas Electronics | ||
Maximum Continuous Collector Current 60 A | ||
Maximum Collector Emitter Voltage 650 V | ||
Maximum Gate Emitter Voltage ±30V | ||
Number of Transistors 1 | ||
Maximum Power Dissipation 65 W | ||
Package Type TO-3PFP | ||
Mounting Type Through Hole | ||
Channel Type P | ||
Pin Count 3 | ||
Switching Speed 1MHz | ||
Dimensions 15.5 x 5.5 x 26.5mm | ||
Maximum Operating Temperature +175 °C | ||
Gate Capacitance 1760pF | ||
Energy Rating 1.1mJ | ||
IGBT product series for Power Factor Correction (PFC), UPS, solar power generation, and welding applications, recommended for 50 to 100 kHz frequencies, and not guaranteed against short circuit.
Low collector to emitter saturation voltage
VCE(sat) = 1.5 V typ. (at IC = 30 A, VGE = 15 V, Ta = 25°C)
Built in fast recovery diode in one package
Trench gate and thin wafer technology
High speed switching
tf = 45 ns typ. (at VCC = 400 V, VGE = 15 V, IC = 30 A, Rg = 10 , Ta=25°C , inductive load)
Operation frequency (20kHz ≤ f ˂ 40kHz)
VCE(sat) = 1.5 V typ. (at IC = 30 A, VGE = 15 V, Ta = 25°C)
Built in fast recovery diode in one package
Trench gate and thin wafer technology
High speed switching
tf = 45 ns typ. (at VCC = 400 V, VGE = 15 V, IC = 30 A, Rg = 10 , Ta=25°C , inductive load)
Operation frequency (20kHz ≤ f ˂ 40kHz)
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