Infineon IGW15N120H3FKSA1 IGBT, 15 A 1200 V, 3-Pin TO-247, Through Hole
- RS Stock No.:
- 145-9167
- Mfr. Part No.:
- IGW15N120H3FKSA1
- Manufacturer:
- Infineon
This image is representative of the product range
Subtotal (1 tube of 30 units)*
PHP4,419.36
(exc. VAT)
PHP4,949.67
(inc. VAT)
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- Shipping from May 18, 2026
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Units | Per Unit | Per Tube* |
|---|---|---|
| 30 + | PHP147.312 | PHP4,419.36 |
*price indicative
- RS Stock No.:
- 145-9167
- Mfr. Part No.:
- IGW15N120H3FKSA1
- Manufacturer:
- Infineon
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Maximum Continuous Collector Current | 15 A | |
| Maximum Collector Emitter Voltage | 1200 V | |
| Maximum Gate Emitter Voltage | ±20V | |
| Maximum Power Dissipation | 217 W | |
| Package Type | TO-247 | |
| Mounting Type | Through Hole | |
| Channel Type | N | |
| Pin Count | 3 | |
| Transistor Configuration | Single | |
| Dimensions | 16.13 x 5.21 x 21.1mm | |
| Minimum Operating Temperature | -40 °C | |
| Energy Rating | 2.5mJ | |
| Maximum Operating Temperature | +175 °C | |
| Gate Capacitance | 875pF | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Maximum Continuous Collector Current 15 A | ||
Maximum Collector Emitter Voltage 1200 V | ||
Maximum Gate Emitter Voltage ±20V | ||
Maximum Power Dissipation 217 W | ||
Package Type TO-247 | ||
Mounting Type Through Hole | ||
Channel Type N | ||
Pin Count 3 | ||
Transistor Configuration Single | ||
Dimensions 16.13 x 5.21 x 21.1mm | ||
Minimum Operating Temperature -40 °C | ||
Energy Rating 2.5mJ | ||
Maximum Operating Temperature +175 °C | ||
Gate Capacitance 875pF | ||
- COO (Country of Origin):
- MY
Infineon TrenchStop IGBT Transistors, 1100 to 1600V
A range of IGBT Transistors from Infineon with collector-emitter voltage ratings of 1100 to 1600V featuring TrenchStop™ technology. The range includes devices with an integrated high speed, fast recovery anti-parallel diode.
• Collector-emitter voltage range 1100 to 1600V
• Very low VCEsat
• Low turn-off losses
• Short tail current
• Low EMI
• Maximum junction temperature 175°C
• Very low VCEsat
• Low turn-off losses
• Short tail current
• Low EMI
• Maximum junction temperature 175°C
For these non-cancellable (NC), and non-returnable (NR) products, Terms and Conditions apply.
IGBT Discretes & Modules, Infineon
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
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