IXYS MII100-12A3 Series IGBT Module, 135 A 1200 V, 7-Pin Y4 M5, Panel Mount

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PHP5,451.55

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PHP6,105.74

(inc. VAT)

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1 - 9PHP5,451.55
10 - 49PHP5,288.01
50 - 99PHP5,129.36
100 - 249PHP4,975.48
250 +PHP4,826.23

*price indicative

RS Stock No.:
193-874
Mfr. Part No.:
MII100-12A3
Manufacturer:
IXYS
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Brand

IXYS

Maximum Continuous Collector Current

135 A

Maximum Collector Emitter Voltage

1200 V

Maximum Gate Emitter Voltage

±20V

Configuration

Series

Package Type

Y4 M5

Mounting Type

Panel Mount

Channel Type

N

Pin Count

7

Transistor Configuration

Series

Dimensions

94 x 34 x 30mm

Minimum Operating Temperature

-40 °C

Maximum Operating Temperature

+150 °C

IGBT Modules, IXYS


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IGBT Discretes & Modules, IXYS


The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.

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