Infineon, Gate Driver 2, 2.5 A 20 V, DSO
- RS Stock No.:
- 258-0610
- Mfr. Part No.:
- 2ED21814S06JXUMA1
- Manufacturer:
- Infineon
This image is representative of the product range
Bulk discount available
Subtotal (1 reel of 2500 units)*
PHP187,812.50
(exc. VAT)
PHP210,350.00
(inc. VAT)
FREE delivery for orders over ₱3,000.00
In Stock
- 2,500 unit(s) ready to ship from another location
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per Unit | Per Reel* |
|---|---|---|
| 2500 - 2500 | PHP75.125 | PHP187,812.50 |
| 5000 - 5000 | PHP72.871 | PHP182,177.50 |
| 7500 + | PHP69.956 | PHP174,890.00 |
*price indicative
- RS Stock No.:
- 258-0610
- Mfr. Part No.:
- 2ED21814S06JXUMA1
- Manufacturer:
- Infineon
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | Gate Driver Module | |
| Output Current | 2.5A | |
| Fall Time | 15ns | |
| Package Type | DSO | |
| Driver Type | Gate Driver | |
| Rise Time | 200ns | |
| Minimum Supply Voltage | 10V | |
| Maximum Supply Voltage | 20V | |
| Number of Drivers | 2 | |
| Minimum Operating Temperature | -40°C | |
| Maximum Operating Temperature | 125°C | |
| Standards/Approvals | RoHS Compliant | |
| Series | 2ED21814S06J | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type Gate Driver Module | ||
Output Current 2.5A | ||
Fall Time 15ns | ||
Package Type DSO | ||
Driver Type Gate Driver | ||
Rise Time 200ns | ||
Minimum Supply Voltage 10V | ||
Maximum Supply Voltage 20V | ||
Number of Drivers 2 | ||
Minimum Operating Temperature -40°C | ||
Maximum Operating Temperature 125°C | ||
Standards/Approvals RoHS Compliant | ||
Series 2ED21814S06J | ||
Automotive Standard No | ||
The Infineon 650 V high and low side gate driver with high current, and high speed to drive MOSFET and IGBT, with typical 2.5 A sink and source current in DSO-14 package. Based on Infineon SOI-technology, having excellent ruggedness and noise immunity against negative transient voltages on VS pin. No parasitic thyristor structures present in the device, hence no parasitic latch up at all temperature and voltage conditions.
Integrated ultra-fast, low resistance bootstrap diode, lower the BOM cost
High and Low Voltage Pins Separated for Maximum Creep age and Clearance
Separate logic and power ground