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Select all	Attribute	Value
	Brand	STMicroelectronics
	Product Type	Gate Driver
	Output Current	600mA
	Pin Count	28
	Fall Time	120ns
	Package Type	SOIC
	Number of Outputs	3
	Driver Type	MOSFET
	Rise Time	120ns
	Minimum Supply Voltage	-0.3V
	Number of Drivers	3
	Maximum Supply Voltage	78V
	Minimum Operating Temperature	-40°C
	Maximum Operating Temperature	125°C
	Height	1mm
	Length	4.15mm
	Width	4.15 mm
	Standards/Approvals	No
	Mount Type	Surface
	Automotive Standard	No

	Select all
	Brand STMicroelectronics
	Product Type Gate Driver
	Output Current 600mA
	Pin Count 28
	Fall Time 120ns
	Package Type SOIC
	Number of Outputs 3
	Driver Type MOSFET
	Rise Time 120ns
	Minimum Supply Voltage -0.3V
	Number of Drivers 3
	Maximum Supply Voltage 78V
	Minimum Operating Temperature -40°C
	Maximum Operating Temperature 125°C
	Height 1mm
	Length 4.15mm
	Width 4.15 mm
	Standards/Approvals No
	Mount Type Surface
	Automotive Standard No

Datasheet - STDRIVE101

The STDRIVE101 is a low voltage gate driver suitable for driving three-phase brushless motors.

It is a single-chip with three half-bridge gate drivers for N-channel power MOSFETs. Each driver has a current capability of 600 mA (sink/source). It integrates a low drop linear regulator generating the supply voltage for both low-side and high-side gate drivers through a bootstrap circuitry.

The device provides Under Voltage Lock Out (UVLO) on both the low-side and high-side sections, preventing the power switches from operating in low efficiency or dangerous conditions.

The control logic integrated into the STDRIVE101 allows two input strategies (high-side and low-side or enable and PWM driving signals). The driving method is selected according to DT/MODE pin. In both cases, prevention from cross conduction is ensured by interlocking or internally generated deadtime.

The STDRIVE101 also features a VDS monitoring protection for each external MOSFET, thermal shutdown and can be put in the standby mode to reduce the power consumption.

The device is available in a VFQFPN 4x4 24 leads package option.

Operating voltage from 5.5 to 75 V

600 mA sink/source current capability

3.3 V and 5 V control logic

Two input strategies:

ENx/INx with adjustable deadtime generation

INHx/INLx with interlocking

Matched propagation delay for all channels

Very short propagation delay: 40 ns

Integrated bootstrap diodes

12 V LDO linear regulator (50 mA max.)

Embedded VDS monitor for each external MOSFET

Overcurrent comparator

UVLO and thermal shutdown protection

Standby mode for low current consumption operation

STMicroelectronics MOSFET Gate Driver 3, 600 mA 28-Pin 78 V, SOIC

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