onsemi MJD112-1G NPN Darlington Transistor, 2 A 100 V HFE:1000, 3-Pin IPAK (TO-251)

RS Stock No.:: 178-4811
Mfr. Part No.:: MJD112-1G
Manufacturer:: onsemi

onsemi MJD112-1G NPN Darlington Transistor, 2 A 100 V HFE:1000, 3-Pin IPAK (TO-251)

Price Each (In a Tube of 75)

PHP30.143

(exc. VAT)

PHP33.76

(inc. VAT)

15 In Global stock for delivery. NCR Plus within 10 working day(s), rest of PH within 14 working days*

450 In Global stock for delivery. NCR Plus within 10 working day(s), rest of PH within 14 working days

* Delivery dates may change based on your chosen quantity and delivery address.

Units	Per Unit	Per Tube**
75 +	PHP30.143	PHP2,260.725

**price indicative

RS Stock No.:: 178-4811
Mfr. Part No.:: MJD112-1G
Manufacturer:: onsemi

Datasheet - MJD112-1G

Attribute	Value
Transistor Type	NPN
Maximum Continuous Collector Current	2 A
Maximum Collector Emitter Voltage	100 V
Maximum Emitter Base Voltage	5 V
Package Type	IPAK (TO-251)
Mounting Type	Through Hole
Pin Count	3
Transistor Configuration	Single
Number of Elements per Chip	1
Minimum DC Current Gain	1000
Maximum Base Emitter Saturation Voltage	4 V
Maximum Collector Base Voltage	100 V
Maximum Collector Emitter Saturation Voltage	3 V
Maximum Collector Cut-off Current	20µA
Length	6.73mm
Maximum Operating Temperature	+150 °C
Maximum Power Dissipation	20 W
Width	2.38mm
Height	6.35mm
Minimum Operating Temperature	-65 °C
Dimensions	6.73 x 2.38 x 6.35mm

onsemi MJD112-1G NPN Darlington Transistor, 2 A 100 V HFE:1000, 3-Pin IPAK (TO-251)

NPN Darlington Transistors, ON Semiconductor

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