Toshiba HN1C01FE-GR(T5L,F) Bipolar Transistor, 150 mA NPN, 50 V, 6-Pin ES
- RS Stock No.:
- 756-0584
- Mfr. Part No.:
- HN1C01FE-GR(T5L,F)
- Manufacturer:
- Toshiba
This image is representative of the product range
Bulk discount available
Subtotal (1 pack of 10 units)*
PHP146.96
(exc. VAT)
PHP164.60
(inc. VAT)
FREE delivery for orders over ₱3,000.00
Temporarily out of stock
- 170 unit(s) shipping from March 09, 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per Unit | Per Pack* |
|---|---|---|
| 10 - 10 | PHP14.696 | PHP146.96 |
| 20 - 40 | PHP14.255 | PHP142.55 |
| 50 - 90 | PHP13.826 | PHP138.26 |
| 100 - 190 | PHP13.519 | PHP135.19 |
| 200 + | PHP13.226 | PHP132.26 |
*price indicative
- RS Stock No.:
- 756-0584
- Mfr. Part No.:
- HN1C01FE-GR(T5L,F)
- Manufacturer:
- Toshiba
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Toshiba | |
| Product Type | Bipolar Transistor | |
| Maximum DC Collector Current Idc | 150mA | |
| Maximum Collector Emitter Voltage Vceo | 50V | |
| Package Type | ES | |
| Mount Type | Surface | |
| Transistor Configuration | Isolated | |
| Maximum Collector Base Voltage VCBO | 60V | |
| Maximum Power Dissipation Pd | 100mW | |
| Minimum Operating Temperature | 0°C | |
| Maximum Emitter Base Voltage VEBO | 5V | |
| Minimum DC Current Gain hFE | 120 | |
| Transistor Polarity | NPN | |
| Maximum Transition Frequency ft | 80MHz | |
| Maximum Operating Temperature | 150°C | |
| Pin Count | 6 | |
| Length | 1.6mm | |
| Height | 0.55mm | |
| Width | 1.6 mm | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Toshiba | ||
Product Type Bipolar Transistor | ||
Maximum DC Collector Current Idc 150mA | ||
Maximum Collector Emitter Voltage Vceo 50V | ||
Package Type ES | ||
Mount Type Surface | ||
Transistor Configuration Isolated | ||
Maximum Collector Base Voltage VCBO 60V | ||
Maximum Power Dissipation Pd 100mW | ||
Minimum Operating Temperature 0°C | ||
Maximum Emitter Base Voltage VEBO 5V | ||
Minimum DC Current Gain hFE 120 | ||
Transistor Polarity NPN | ||
Maximum Transition Frequency ft 80MHz | ||
Maximum Operating Temperature 150°C | ||
Pin Count 6 | ||
Length 1.6mm | ||
Height 0.55mm | ||
Width 1.6 mm | ||
Standards/Approvals No | ||
Automotive Standard No | ||
- COO (Country of Origin):
- JP
Small Signal NPN Transistors, Toshiba
Bipolar Transistors, Toshiba
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