Specifications

Technical data sheets

Legislation and Compliance

Product Details

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Select all	Attribute	Value
	Brand	onsemi
	Product Type	Bipolar Transistor
	Maximum DC Collector Current Idc	100A
	Maximum Collector Emitter Voltage Vceo	650V
	Package Type	TO-247
	Mount Type	Through Hole
	Transistor Configuration	Single
	Maximum Power Dissipation Pd	238W
	Transistor Polarity	NPN
	Maximum Transition Frequency ft	1MHz
	Minimum Operating Temperature	175°C
	Pin Count	3
	Maximum Operating Temperature	175°C
	Standards/Approvals	AEC-Q101
	Series	AFGHL50T65SQDC
	Automotive Standard	AEC-Q101

	Select all
	Brand onsemi
	Product Type Bipolar Transistor
	Maximum DC Collector Current Idc 100A
	Maximum Collector Emitter Voltage Vceo 650V
	Package Type TO-247
	Mount Type Through Hole
	Transistor Configuration Single
	Maximum Power Dissipation Pd 238W
	Transistor Polarity NPN
	Maximum Transition Frequency ft 1MHz
	Minimum Operating Temperature 175°C
	Pin Count 3
	Maximum Operating Temperature 175°C
	Standards/Approvals AEC-Q101
	Series AFGHL50T65SQDC
	Automotive Standard AEC-Q101

Datasheet AFGHL50T65SQDC

Using novel field stop IGBT and SiC SBD technology, ON semiconductor's new series of hybrid IGBTs offer the optimum performance for hard switching application. The device co-packages a silicon-based IGBT with a SiC Schottky barrier diode, resulting in an excellent tradeoff between the lower performance of silicon-based solutions and the higher cost of entirely SiC-based solutions.

Copacked with SiC schottky barrier diode

Ultra low reverse recovery loss

Maximum Junction Temperature, Tj=175°C

Higher reliability

Very low switching and conduction losses

Positive temperature co-efficient

Tight parameter distribution

Applications

Automotive

Industrial Inverter

DC-DC Converter

PFC, Totem Pole Bridgeless

Hard Switching

onsemi Bipolar Transistor, 100 A NPN, 650 V, 3-Pin TO-247

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