STMicroelectronics Bipolar Transistor, 8 A NPN, 450 V, 3-Pin TO-220

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Subtotal (1 tube of 50 units)*

PHP3,038.00

(exc. VAT)

PHP3,402.50

(inc. VAT)

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  • 1,650 unit(s) ready to ship from another location
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Units
Per Unit
Per Tube*
50 - 50PHP60.76PHP3,038.00
100 - 450PHP58.937PHP2,946.85
500 - 950PHP57.169PHP2,858.45
1000 - 1950PHP55.454PHP2,772.70
2000 +PHP53.791PHP2,689.55

*price indicative

RS Stock No.:
188-8269
Mfr. Part No.:
BUL1102EFP
Manufacturer:
STMicroelectronics
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Brand

STMicroelectronics

Product Type

Bipolar Transistor

Maximum DC Collector Current Idc

8A

Maximum Collector Emitter Voltage Vceo

450V

Package Type

TO-220

Mount Type

Through Hole

Transistor Configuration

Single

Maximum Power Dissipation Pd

70W

Maximum Emitter Base Voltage VEBO

12V

Minimum Operating Temperature

-65°C

Transistor Polarity

NPN

Minimum DC Current Gain hFE

12

Pin Count

3

Maximum Operating Temperature

150°C

Series

BUL1102E

Height

30.6mm

Length

10.4mm

Standards/Approvals

No

Automotive Standard

No

This is a high voltage fast switching NPN power transistor manufactured in multi epitaxial Planar technology. It uses a cellular emitter structure with Planar edge termination to enhance switching speeds while maintaining a wide RBSOA.

Thanks to an increased intermediate layer, it has an intrinsic ruggedness which enables the transistor to withstand a high collector current level during breakdown condition, without using the Transil™ protection usually necessary in typical converters for lamp ballast.

High voltage capability

Very high switching speed

Applications

Four lamp electronic ballast for:

120 V mains in push-pull configuration

277 V mains in half bridge current feed configuration