Specifications

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Product Details

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Select all	Attribute	Value
	Brand	onsemi
	Product Type	Digital Transistor
	Maximum Collector Emitter Voltage Vceo	50V
	Mount Type	Surface
	Transistor Configuration	Single
	Maximum Collector Base Voltage VCBO	50V
	Minimum DC Current Gain hFE	80
	Transistor Polarity	NPN
	Maximum Power Dissipation Pd	310mW
	Pin Count	3
	Maximum Operating Temperature	150°C
	Width	2.4 mm
	Length	2.2mm
	Standards/Approvals	No
	Height	1mm
	Series	MUN5213
	Automotive Standard	AEC-Q101

	Select all
	Brand onsemi
	Product Type Digital Transistor
	Maximum Collector Emitter Voltage Vceo 50V
	Mount Type Surface
	Transistor Configuration Single
	Maximum Collector Base Voltage VCBO 50V
	Minimum DC Current Gain hFE 80
	Transistor Polarity NPN
	Maximum Power Dissipation Pd 310mW
	Pin Count 3
	Maximum Operating Temperature 150°C
	Width 2.4 mm
	Length 2.2mm
	Standards/Approvals No
	Height 1mm
	Series MUN5213
	Automotive Standard AEC-Q101

Datasheet MUN5213T1G

This series of digital transistors is designed to replace a single device and its external resistor bias network. The Bias Resistor Transistor (BRT) contains a single transistor with a monolithic bias network consisting of two resistors, a series base resistor and a base-emitter resistor. The BRT eliminates these individual components by integrating them into a single device. The use of a BRT can reduce both system cost and board space.

Simplifies Circuit Design

Reduces Board Space

Reduces Component Count

S and NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements, PPAP capable

These Devices are Pb-Free, Halogen Free/BFR Free

onsemi MUN5213T1G Digital Transistor, 50 V NPN Surface, 3-Pin

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