onsemi BDV64BG Bipolar Transistor, -10 A PNP, -100 V, 3-Pin TO-218
- RS Stock No.:
- 184-4188
- Mfr. Part No.:
- BDV64BG
- Manufacturer:
- onsemi
Bulk discount available
Subtotal (1 tube of 30 units)*
PHP3,784.80
(exc. VAT)
PHP4,239.00
(inc. VAT)
FREE delivery for orders over ₱3,000.00
In Stock
- Plus 390 unit(s) shipping from February 02, 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per Unit | Per Tube* |
|---|---|---|
| 30 - 120 | PHP126.16 | PHP3,784.80 |
| 150 - 270 | PHP122.375 | PHP3,671.25 |
| 300 + | PHP118.704 | PHP3,561.12 |
*price indicative
- RS Stock No.:
- 184-4188
- Mfr. Part No.:
- BDV64BG
- Manufacturer:
- onsemi
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | onsemi | |
| Product Type | Bipolar Transistor | |
| Maximum DC Collector Current Idc | -10A | |
| Maximum Collector Emitter Voltage Vceo | -100V | |
| Package Type | TO-218 | |
| Mount Type | Through Hole | |
| Transistor Configuration | Single | |
| Maximum Collector Base Voltage VCBO | 100V | |
| Transistor Polarity | PNP | |
| Minimum Operating Temperature | -65°C | |
| Maximum Power Dissipation Pd | 125W | |
| Minimum DC Current Gain hFE | 1000 | |
| Maximum Emitter Base Voltage VEBO | 5V | |
| Pin Count | 3 | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Series | BDV64B | |
| Height | 41.91mm | |
| Length | 16.26mm | |
| Width | 5.3 mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand onsemi | ||
Product Type Bipolar Transistor | ||
Maximum DC Collector Current Idc -10A | ||
Maximum Collector Emitter Voltage Vceo -100V | ||
Package Type TO-218 | ||
Mount Type Through Hole | ||
Transistor Configuration Single | ||
Maximum Collector Base Voltage VCBO 100V | ||
Transistor Polarity PNP | ||
Minimum Operating Temperature -65°C | ||
Maximum Power Dissipation Pd 125W | ||
Minimum DC Current Gain hFE 1000 | ||
Maximum Emitter Base Voltage VEBO 5V | ||
Pin Count 3 | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Series BDV64B | ||
Height 41.91mm | ||
Length 16.26mm | ||
Width 5.3 mm | ||
Automotive Standard No | ||
- COO (Country of Origin):
- CN
The 10 A, 100 V NPN Bipolar Power Transistor is for use as an output devices in complementary general purpose amplifier applications. The BDV65B (NPN) and BDV64B (PNP) are complementary devices.
High DC Current Gain HFE = 1000 (min.) @ 5 Adc
Monolithic Construction with Built-in Base Emitter Shunt Resistors
These devices are available in Pb-free package(s). Specifications herein apply to both standard and Pb-free devices
Related links
- onsemi MJD42CG PNP Transistor -100 V, 3-Pin DPAK
- Nexperia PHPT61010PYX PNP Transistor -100 V SOT669
- onsemi MJH6287G PNP Transistor -100 V, 3-Pin TO-218
- onsemi TIP33CG NPN Darlington Transistor 15 (Peak) A 100 V dc HFE:20, 3-Pin TO-218
- onsemi TIP147G PNP Darlington Transistor 3-Pin TO-247
- onsemi MJE2955TG PNP Transistor -60 V, 3-Pin TO-220AB
- onsemi 2SA2222SG PNP Transistor -50 V, 3-Pin TO-220F-3FS
- Nexperia PHPT61010NYX NPN Transistor 100 V SOT669
