onsemi BDV64BG Bipolar Transistor, -10 A PNP, -100 V, 3-Pin TO-218

Bulk discount available

Subtotal (1 tube of 30 units)*

PHP3,784.80

(exc. VAT)

PHP4,239.00

(inc. VAT)

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  • Plus 390 unit(s) shipping from February 02, 2026
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Units
Per Unit
Per Tube*
30 - 120PHP126.16PHP3,784.80
150 - 270PHP122.375PHP3,671.25
300 +PHP118.704PHP3,561.12

*price indicative

RS Stock No.:
184-4188
Mfr. Part No.:
BDV64BG
Manufacturer:
onsemi
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Brand

onsemi

Product Type

Bipolar Transistor

Maximum DC Collector Current Idc

-10A

Maximum Collector Emitter Voltage Vceo

-100V

Package Type

TO-218

Mount Type

Through Hole

Transistor Configuration

Single

Maximum Collector Base Voltage VCBO

100V

Transistor Polarity

PNP

Minimum Operating Temperature

-65°C

Maximum Power Dissipation Pd

125W

Minimum DC Current Gain hFE

1000

Maximum Emitter Base Voltage VEBO

5V

Pin Count

3

Maximum Operating Temperature

150°C

Standards/Approvals

No

Series

BDV64B

Height

41.91mm

Length

16.26mm

Width

5.3 mm

Automotive Standard

No

COO (Country of Origin):
CN
The 10 A, 100 V NPN Bipolar Power Transistor is for use as an output devices in complementary general purpose amplifier applications. The BDV65B (NPN) and BDV64B (PNP) are complementary devices.

High DC Current Gain HFE = 1000 (min.) @ 5 Adc

Monolithic Construction with Built-in Base Emitter Shunt Resistors

These devices are available in Pb-free package(s). Specifications herein apply to both standard and Pb-free devices

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