Infineon 650 V 10 A SiC Schottky Diode Schottky 5-Pin ThinPAK 8x8 IDL10G65C5XUMA2
- RS Stock No.:
- 244-2891
- Mfr. Part No.:
- IDL10G65C5XUMA2
- Manufacturer:
- Infineon
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PHP192.28
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PHP215.35
(inc. VAT)
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Units | Per Unit |
|---|---|
| 1 - 9 | PHP192.28 |
| 10 - 99 | PHP182.43 |
| 100 - 249 | PHP173.48 |
| 250 - 499 | PHP164.98 |
| 500 + | PHP156.48 |
*price indicative
- RS Stock No.:
- 244-2891
- Mfr. Part No.:
- IDL10G65C5XUMA2
- Manufacturer:
- Infineon
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | SiC Schottky Diode | |
| Package Type | ThinPAK 8x8 | |
| Maximum Continuous Forward Current If | 10A | |
| Peak Reverse Repetitive Voltage Vrrm | 650V | |
| Series | 5th Generation thinQ!TM | |
| Rectifier Type | Schottky | |
| Pin Count | 5 | |
| Maximum Forward Voltage Vf | 1.7V | |
| Peak Reverse Current Ir | 180μA | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | J-STD20, JESD22 | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type SiC Schottky Diode | ||
Package Type ThinPAK 8x8 | ||
Maximum Continuous Forward Current If 10A | ||
Peak Reverse Repetitive Voltage Vrrm 650V | ||
Series 5th Generation thinQ!TM | ||
Rectifier Type Schottky | ||
Pin Count 5 | ||
Maximum Forward Voltage Vf 1.7V | ||
Peak Reverse Current Ir 180μA | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals J-STD20, JESD22 | ||
Automotive Standard No | ||
The Infineon IDL10G65C5XUMA2 generation 5 represents Infineon leading edge technology for the SiC Schottky Barrier diodes. The Infineon proprietary diffusion soldering process, already introduced with G3 is now combined with a new, more compact design and thin-wafer technology. The result is a new family of products showing improvedefficiency over all load conditions, resulting from both the improved thermal characteristics and a lower figure of merit (Qc x Vf).
Revolutionary semiconductor material - Silicon Carbide
Benchmark switching behavior
No reverse recovery/ No forward recovery
Temperature independent switching behavior
High surge current capability
Pb-free lead plating; RoHS compliant
Qualified according to JEDEC1) for target applications
Breakdown voltage tested at 22 mA2)
Optimized for high temperature operation
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