STMicroelectronics 650 V 10 A Diode 3-Pin D2PAK STPSC10065G2-TR
- RS Stock No.:
- 229-2094
- Mfr. Part No.:
- STPSC10065G2-TR
- Manufacturer:
- STMicroelectronics
Currently unavailable
We don't know if this item will be back in stock, RS intend to remove it from our range soon.
- RS Stock No.:
- 229-2094
- Mfr. Part No.:
- STPSC10065G2-TR
- Manufacturer:
- STMicroelectronics
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | STMicroelectronics | |
| Mount Type | Through Hole | |
| Product Type | Diode | |
| Package Type | TO-263 | |
| Maximum Continuous Forward Current If | 10A | |
| Peak Reverse Repetitive Voltage Vrrm | 650V | |
| Series | STPSC10065 | |
| Diode Configuration | Single | |
| Pin Count | 3 | |
| Minimum Operating Temperature | -40°C | |
| Peak Reverse Current Ir | 53μA | |
| Maximum Forward Voltage Vf | 1.65V | |
| Peak Non-Repetitive Forward Surge Current Ifsm | 48A | |
| Maximum Operating Temperature | 175°C | |
| Diameter | 3.75 mm | |
| Standards/Approvals | No | |
| Width | 10 mm | |
| Length | 28.25mm | |
| Height | 4.4mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand STMicroelectronics | ||
Mount Type Through Hole | ||
Product Type Diode | ||
Package Type TO-263 | ||
Maximum Continuous Forward Current If 10A | ||
Peak Reverse Repetitive Voltage Vrrm 650V | ||
Series STPSC10065 | ||
Diode Configuration Single | ||
Pin Count 3 | ||
Minimum Operating Temperature -40°C | ||
Peak Reverse Current Ir 53μA | ||
Maximum Forward Voltage Vf 1.65V | ||
Peak Non-Repetitive Forward Surge Current Ifsm 48A | ||
Maximum Operating Temperature 175°C | ||
Diameter 3.75 mm | ||
Standards/Approvals No | ||
Width 10 mm | ||
Length 28.25mm | ||
Height 4.4mm | ||
Automotive Standard No | ||
The STMicroelectronics STPSC10065 is the 10 A, 650 V SiC diode is an ultra high performance power schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure with a 650 V rating.
No or negligible reverse recovery
Switching behaviour independent of temperature
Dedicated to PFC applications
High forward surge capability
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