STMicroelectronics 1200 V 15 A Diode 2-Pin D2PAK
- RS Stock No.:
- 219-4235
- Mfr. Part No.:
- STPSC15H12G2-TR
- Manufacturer:
- STMicroelectronics
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Subtotal (1 reel of 1000 units)*
PHP404,246.00
(exc. VAT)
PHP452,756.00
(inc. VAT)
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- Shipping from July 22, 2026
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Units | Per Unit | Per Reel* |
|---|---|---|
| 1000 - 1000 | PHP404.246 | PHP404,246.00 |
| 2000 + | PHP398.051 | PHP398,051.00 |
*price indicative
- RS Stock No.:
- 219-4235
- Mfr. Part No.:
- STPSC15H12G2-TR
- Manufacturer:
- STMicroelectronics
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | STMicroelectronics | |
| Mount Type | Surface | |
| Product Type | Diode | |
| Package Type | TO-263 | |
| Maximum Continuous Forward Current If | 15A | |
| Peak Reverse Repetitive Voltage Vrrm | 1200V | |
| Diode Configuration | Single | |
| Series | STPSC15H12G2-TR | |
| Pin Count | 2 | |
| Peak Non-Repetitive Forward Surge Current Ifsm | 90A | |
| Minimum Operating Temperature | -40°C | |
| Maximum Forward Voltage Vf | 2.25V | |
| Peak Reverse Current Ir | 45μA | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | No | |
| Height | 4.4mm | |
| Length | 15.95mm | |
| Width | 10.98 mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand STMicroelectronics | ||
Mount Type Surface | ||
Product Type Diode | ||
Package Type TO-263 | ||
Maximum Continuous Forward Current If 15A | ||
Peak Reverse Repetitive Voltage Vrrm 1200V | ||
Diode Configuration Single | ||
Series STPSC15H12G2-TR | ||
Pin Count 2 | ||
Peak Non-Repetitive Forward Surge Current Ifsm 90A | ||
Minimum Operating Temperature -40°C | ||
Maximum Forward Voltage Vf 2.25V | ||
Peak Reverse Current Ir 45μA | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals No | ||
Height 4.4mm | ||
Length 15.95mm | ||
Width 10.98 mm | ||
Automotive Standard No | ||
The STMicroelectronics 15 A, 1200 V Sic diode is an ultra-high performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure with a 1200 V rating. Due to the Schottky construction, no recovery is shown at turn-off and ringing patterns are negligible. The minimal capacitive turn-off behaviour is independent of temperature. Housed in D²PAK HV, this diode is perfectly suited for a usage in PFC applications, in charging station, DC/DC, easing the compliance to IEC-60664-1.The STPSC15H12G2-TR will boost performances in hard switching conditions. Its high forward surge capability ensures good robustness during transient phases.
No or negligible reverse recovery
Switching behaviour independent of temperature
Robust high voltage periphery
Operating Tj from -40 °C to 175 °C
Low VF
D²PAK HV creepage distance (anode to cathode) = 5.38 mm min.
ECOPACK2 compliant
Related links
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