STMicroelectronics 650 V 8 A Diode 2-Pin TO-220 STPSC8065D
- RS Stock No.:
- 164-6987
- Mfr. Part No.:
- STPSC8065D
- Manufacturer:
- STMicroelectronics
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Subtotal (1 pack of 5 units)*
PHP681.27
(exc. VAT)
PHP763.02
(inc. VAT)
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- Shipping from June 26, 2026
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Units | Per Unit | Per Pack* |
|---|---|---|
| 5 - 5 | PHP136.254 | PHP681.27 |
| 10 + | PHP124.534 | PHP622.67 |
*price indicative
- RS Stock No.:
- 164-6987
- Mfr. Part No.:
- STPSC8065D
- Manufacturer:
- STMicroelectronics
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | STMicroelectronics | |
| Mount Type | Through Hole | |
| Product Type | Diode | |
| Package Type | TO-220 | |
| Maximum Continuous Forward Current If | 8A | |
| Peak Reverse Repetitive Voltage Vrrm | 650V | |
| Series | STPSC | |
| Diode Configuration | Single | |
| Pin Count | 2 | |
| Peak Reverse Current Ir | 750μA | |
| Peak Non-Repetitive Forward Surge Current Ifsm | 200A | |
| Maximum Forward Voltage Vf | 1.65V | |
| Minimum Operating Temperature | -40°C | |
| Maximum Operating Temperature | 175°C | |
| Diameter | 3.75 mm | |
| Height | 15.75mm | |
| Length | 10.4mm | |
| Standards/Approvals | No | |
| Width | 4.6 mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand STMicroelectronics | ||
Mount Type Through Hole | ||
Product Type Diode | ||
Package Type TO-220 | ||
Maximum Continuous Forward Current If 8A | ||
Peak Reverse Repetitive Voltage Vrrm 650V | ||
Series STPSC | ||
Diode Configuration Single | ||
Pin Count 2 | ||
Peak Reverse Current Ir 750μA | ||
Peak Non-Repetitive Forward Surge Current Ifsm 200A | ||
Maximum Forward Voltage Vf 1.65V | ||
Minimum Operating Temperature -40°C | ||
Maximum Operating Temperature 175°C | ||
Diameter 3.75 mm | ||
Height 15.75mm | ||
Length 10.4mm | ||
Standards/Approvals No | ||
Width 4.6 mm | ||
Automotive Standard No | ||
The SiC diode is an ultra high performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure with a 650 V rating. Due to the Schottky construction, no recovery is shown at turn-off and ringing patterns are negligible. The minimal capacitive turn-off behavior is independent of temperature. Especially suited for use in PFC applications, this ST SiC diode will boost performance in hard switching conditions. Its high forward surge capability ensures good robustness during transient phases
No or negligible reverse recovery
Switching behavior independent of temperature
Dedicated to PFC applications
High forward surge capability
Operating Tj from -40 °C to 175 °C
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