STMicroelectronics 650 V 30 A Schottky Diode SiC Schottky 7-Pin HU3PAK STPSC30G065L2Y
- RS Stock No.:
- 719-663
- Mfr. Part No.:
- STPSC30G065L2Y
- Manufacturer:
- STMicroelectronics
N
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Units | Per Unit |
|---|---|
| 1 - 9 | PHP655.05 |
| 10 - 49 | PHP576.76 |
| 50 - 99 | PHP517.60 |
| 100 + | PHP445.40 |
*price indicative
- RS Stock No.:
- 719-663
- Mfr. Part No.:
- STPSC30G065L2Y
- Manufacturer:
- STMicroelectronics
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | STMicroelectronics | |
| Mount Type | Through Hole | |
| Product Type | Schottky Diode | |
| Package Type | HU3PAK | |
| Maximum Continuous Forward Current If | 30A | |
| Peak Reverse Repetitive Voltage Vrrm | 650V | |
| Diode Configuration | Silicon Carbide Schottky Diode | |
| Series | STPSC | |
| Rectifier Type | SiC Schottky | |
| Pin Count | 7 | |
| Minimum Operating Temperature | -55°C | |
| Maximum Forward Voltage Vf | 1.3V | |
| Peak Reverse Current Ir | 1200μA | |
| Peak Non-Repetitive Forward Surge Current Ifsm | 1100A | |
| Maximum Operating Temperature | 175°C | |
| Width | 14.1 mm | |
| Height | 3.6mm | |
| Length | 11.9mm | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand STMicroelectronics | ||
Mount Type Through Hole | ||
Product Type Schottky Diode | ||
Package Type HU3PAK | ||
Maximum Continuous Forward Current If 30A | ||
Peak Reverse Repetitive Voltage Vrrm 650V | ||
Diode Configuration Silicon Carbide Schottky Diode | ||
Series STPSC | ||
Rectifier Type SiC Schottky | ||
Pin Count 7 | ||
Minimum Operating Temperature -55°C | ||
Maximum Forward Voltage Vf 1.3V | ||
Peak Reverse Current Ir 1200μA | ||
Peak Non-Repetitive Forward Surge Current Ifsm 1100A | ||
Maximum Operating Temperature 175°C | ||
Width 14.1 mm | ||
Height 3.6mm | ||
Length 11.9mm | ||
Automotive Standard AEC-Q101 | ||
The STMicroelectronics SiC diode is an ultrahigh performance power Schottky rectifier. It is manufactured using a silicon carbide substrate. The wide band-gap material allows the design of a low VF Schottky diode structure with a 650 V rating. Due to the Schottky construction, no recovery is shown at turn-off and ringing patterns are negligible. The minimal capacitive turn-off behaviour is independent of temperature.
AEC-Q101 qualified and PPAP capable
No reverse recovery charge in application current range
Switching behaviour independent of temperature
High forward surge current capability
ECOPACK2 compliant component
SMD with TOP side cooling package
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