BGAP2D30AE6327XTSA1 Infineon Pre-Driver for Wireless Infrastructure Applications 35.2 dB, 16-Pin 4200 MHz TSNP-16
- RS Stock No.:
- 349-417
- Mfr. Part No.:
- BGAP2D30AE6327XTSA1
- Manufacturer:
- Infineon
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PHP500.97
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PHP561.09
(inc. VAT)
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- Shipping from June 19, 2026
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Units | Per Unit |
|---|---|
| 1 - 9 | PHP500.97 |
| 10 - 99 | PHP451.22 |
| 100 - 499 | PHP415.44 |
| 500 - 999 | PHP385.76 |
| 1000 + | PHP345.62 |
*price indicative
- RS Stock No.:
- 349-417
- Mfr. Part No.:
- BGAP2D30AE6327XTSA1
- Manufacturer:
- Infineon
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | Pre-Driver for Wireless Infrastructure Applications | |
| Operating Frequency | 4200 MHz | |
| Technology | BiCMOS | |
| Gain | 35.2dB | |
| Package Type | TSNP-16 | |
| Minimum Supply Voltage | 4.75V | |
| Maximum Supply Voltage | 5.5V | |
| Pin Count | 16 | |
| Noise Figure | 4.5dB | |
| Third Order Intercept OIP3 | 34.5dBm | |
| Minimum Operating Temperature | -40°C | |
| Maximum Operating Temperature | 115°C | |
| Height | 8mm | |
| Standards/Approvals | RoHS, JEDEC47/20/22 | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type Pre-Driver for Wireless Infrastructure Applications | ||
Operating Frequency 4200 MHz | ||
Technology BiCMOS | ||
Gain 35.2dB | ||
Package Type TSNP-16 | ||
Minimum Supply Voltage 4.75V | ||
Maximum Supply Voltage 5.5V | ||
Pin Count 16 | ||
Noise Figure 4.5dB | ||
Third Order Intercept OIP3 34.5dBm | ||
Minimum Operating Temperature -40°C | ||
Maximum Operating Temperature 115°C | ||
Height 8mm | ||
Standards/Approvals RoHS, JEDEC47/20/22 | ||
Automotive Standard No | ||
- COO (Country of Origin):
- MY
The Infineon 3.3 to 4.2 GHz mid band driver amplifier that can be used as pre driver or driver in RF applications from massive MIMO 5G base stations to small cells and access points. The driver amplifier is typically placed between transceiver IC and power amplifier but can also be used as power amplifier for low power applications.
BiCMOS technology for an optimized performance
High gain and high power for fewer components in line up
Internal matching and saving external matching components
Easy design in and small area footprint
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