onsemi FGD3040G2_F085 IGBT, 41 A 300 V, 3-Pin DPAK (TO-252), Surface Mount
- RS Stock No.:
- 807-0767
- Mfr. Part No.:
- FGD3040G2-F085
- Manufacturer:
- onsemi
Temporarily out of stock - back order for despatch 21/05/2025, delivery within 10 working days from desptach date
Added
Price Each (In a Pack of 5)
PHP119.88
(exc. VAT)
PHP134.27
(inc. VAT)
| Units | Per Unit | Per Pack* |
| 5 - 20 | PHP119.88 | PHP599.40 |
| 25 - 95 | PHP116.282 | PHP581.41 |
| 100 - 245 | PHP112.794 | PHP563.97 |
| 250 - 495 | PHP109.412 | PHP547.06 |
| 500 + | PHP106.13 | PHP530.65 |
| *price indicative | ||
- RS Stock No.:
- 807-0767
- Mfr. Part No.:
- FGD3040G2-F085
- Manufacturer:
- onsemi
Legislation and Compliance
Product Details
Automotive Ignition IGBT, Fairchild Semiconductor
These EcoSPARK IGBT devices are optimised for driving automotive ignition coils. They have been stress tested and meet the AEC-Q101 standard.
Features
• Logic-level gate drive
• ESD Protection
• Applications: Automotive ignition coil driver circuits, Coil-on-Plug applications
• ESD Protection
• Applications: Automotive ignition coil driver circuits, Coil-on-Plug applications
RS Product Codes
864-8802 FGB3040CS 400V 20A D2PAK
864-8805 FGB3040G2_F085 400V 25A DPAK-2
807-0767 FGD3040G2_F085 400V 25A DPAK
864-8880 FGI3040G2_F085 400V 25A I2PAK
864-8899 FGP3040G2_F085 400V 25A TO220
864-8809 FGB3245G2_F085 450V 23A D2PAK-2
864-8827 FGD3245G2_F085 450V 23A DPAK
807-0776 FGD3440G2_F085 400V 25A DPAK
864-8818 FGB3440G2_F085 400V 25A D2PAK-2
864-8893 FGP3440G2_F085 400V 25A TO220
807-8751 ISL9V5036P3_F085 360V 31A TO220
862-9369 ISL9V5045S3ST_F085 450V 43A D2PAK
Note
Quoted current ratings apply when junction temperature Tc = +110°C.
Standards
AEC-Q101
For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.
IGBT Discretes & Modules, Fairchild Semiconductor
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
Specifications
Attribute | Value |
|---|---|
| Maximum Continuous Collector Current | 41 A |
| Maximum Collector Emitter Voltage | 300 V |
| Maximum Gate Emitter Voltage | ±10V |
| Maximum Power Dissipation | 150 W |
| Package Type | DPAK (TO-252) |
| Mounting Type | Surface Mount |
| Channel Type | N |
| Pin Count | 3 |
| Switching Speed | 1MHz |
| Transistor Configuration | Single |
| Dimensions | 6.73 x 6.22 x 2.39mm |
| Minimum Operating Temperature | -55 °C |
| Maximum Operating Temperature | +175 °C |