Infineon EB 2ED2410 3D 1BCD MOSFET Gate Driver for Gate Driver, Power MOSFET for Evaluation Mother/Daughterboards User
- RS Stock No.:
- 273-2059
- Mfr. Part No.:
- EB2ED24103D1BCDTOBO1
- Manufacturer:
- Infineon
Subtotal (1 unit)*
PHP6,738.78
(exc. VAT)
PHP7,547.43
(inc. VAT)
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In Stock
- Plus 2 unit(s) shipping from December 08, 2025
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Units | Per Unit |
|---|---|
| 1 + | PHP6,738.78 |
*price indicative
- RS Stock No.:
- 273-2059
- Mfr. Part No.:
- EB2ED24103D1BCDTOBO1
- Manufacturer:
- Infineon
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Power Management Function | MOSFET Gate Driver | |
| For Use With | Evaluation Mother/Daughterboards User Guide | |
| Kit Classification | Evaluation Board | |
| Featured Device | Gate Driver, Power MOSFET | |
| Kit Name | EB 2ED2410 3D 1BCD | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Power Management Function MOSFET Gate Driver | ||
For Use With Evaluation Mother/Daughterboards User Guide | ||
Kit Classification Evaluation Board | ||
Featured Device Gate Driver, Power MOSFET | ||
Kit Name EB 2ED2410 3D 1BCD | ||
EiceDRIVER™ APD 2ED2410-EM - 24 V evaluation MOSFET daughterboard, common drain
This daughterboard belongs to a family of evaluation boards that can be combined with the 2ED2410-EM 24 V evaluation motherboard(EB 2ED2410 3M). These daughterboards are used to address different MOSFET and shunt arrangements typically found in modern automotive power distributions for 12 and 24 V board nets.
This daughterboard EB 2ED2410 3D 1BCD is addressing one load channel and consisting of two 60 V OptiMOSTM5 power MOSFET (1.1 mOhm) in a back2back common drain configuration.
This daughterboard EB 2ED2410 3D 1BCD is addressing one load channel and consisting of two 60 V OptiMOSTM5 power MOSFET (1.1 mOhm) in a back2back common drain configuration.
Following other daughterboards are available:
•EB 2ED2410 3D 1BCS: 60 V OptiMOSTM5 power MOSFET (1.1 mOhm), back2back - common source, 0.5 mOhm shunt
•EB 2ED2410 3D 1BCDP: 60 V OptiMOSTM5 power MOSFET (1.1 mOhm), back2back - common drain, 0.5 mOhm shunt, with pre-charging
•EB 2ED2410 3D 1BCSP: 60 V OptiMOSTM5 power MOSFET (1.1 mOhm), back2back - common source, 0.5 mOhm shunt, with pre-charging
•EB 2ED2410 3D 1BCDP: 60 V OptiMOSTM5 power MOSFET (1.1 mOhm), back2back - common drain, 0.5 mOhm shunt, with pre-charging
•EB 2ED2410 3D 1BCSP: 60 V OptiMOSTM5 power MOSFET (1.1 mOhm), back2back - common source, 0.5 mOhm shunt, with pre-charging
Summary of Features
•Suitable for 12 and 24 V board nets
•Combination with 2ED2410-EM 24 V evaluation motherboard (EB 2ED2410 3M)
•0,5 mOhm shunt resistor
•60 V OptiMOSTM5 power MOSFET (1,1 Ohm) suitable for 12 and 24 V board nets
•MOSFET temperature monitoring with NTC resistors
•Nominal current up to 20 A continuous or 30 A for 10 min
•Combination with 2ED2410-EM 24 V evaluation motherboard (EB 2ED2410 3M)
•0,5 mOhm shunt resistor
•60 V OptiMOSTM5 power MOSFET (1,1 Ohm) suitable for 12 and 24 V board nets
•MOSFET temperature monitoring with NTC resistors
•Nominal current up to 20 A continuous or 30 A for 10 min