OSI Optoelectronics Ultraviolet Photodiode, 65 °, Through Hole Ceramic package
- RS Stock No.:
- 848-6294
- Mfr. Part No.:
- PIN-UV-100DQC
- Manufacturer:
- OSI Optoelectronics
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PHP20,207.03
(exc. VAT)
PHP22,631.87
(inc. VAT)
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In Stock
- 15 unit(s) ready to ship from another location
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Units | Per Unit |
|---|---|
| 1 - 9 | PHP20,207.03 |
| 10 - 49 | PHP19,600.83 |
| 50 + | PHP19,012.81 |
*price indicative
- RS Stock No.:
- 848-6294
- Mfr. Part No.:
- PIN-UV-100DQC
- Manufacturer:
- OSI Optoelectronics
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | OSI Optoelectronics | |
| Spectrums Detected | Ultraviolet | |
| Product Type | Photodiode | |
| Wavelength of Peak Sensitivity | 980nm | |
| Package Type | Ceramic package | |
| Mount Type | Through Hole | |
| Packaging | Tape & Reel | |
| Number of Pins | 2 | |
| Minimum Wavelength Detected | 190nm | |
| Maximum Wavelength Detected | 1100nm | |
| Typical Fall Time | 0.6ns | |
| Minimum Operating Temperature | -25°C | |
| Amplified | No | |
| Maximum Operating Temperature | 85°C | |
| Height | 2.03mm | |
| Width | 14.99mm | |
| Length | 16.51mm | |
| Standards/Approvals | RoHS | |
| Angle of Half Sensitivity | 65 ° | |
| Typical Rise Time | 0.6ns | |
| Dark Current | 0.2nA | |
| Polarity | Reverse | |
| Breakdown Voltage | 30V | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand OSI Optoelectronics | ||
Spectrums Detected Ultraviolet | ||
Product Type Photodiode | ||
Wavelength of Peak Sensitivity 980nm | ||
Package Type Ceramic package | ||
Mount Type Through Hole | ||
Packaging Tape & Reel | ||
Number of Pins 2 | ||
Minimum Wavelength Detected 190nm | ||
Maximum Wavelength Detected 1100nm | ||
Typical Fall Time 0.6ns | ||
Minimum Operating Temperature -25°C | ||
Amplified No | ||
Maximum Operating Temperature 85°C | ||
Height 2.03mm | ||
Width 14.99mm | ||
Length 16.51mm | ||
Standards/Approvals RoHS | ||
Angle of Half Sensitivity 65 ° | ||
Typical Rise Time 0.6ns | ||
Dark Current 0.2nA | ||
Polarity Reverse | ||
Breakdown Voltage 30V | ||
Automotive Standard No | ||
- COO (Country of Origin):
- US
OSI UV Enhanced Series Photodiodes
The UV Enhanced series, from OSI Optoelectronics, are a range of UV enhanced silicon photodiodes. This series includes two seperate families of photodiodes, inversion channel and planar diffused. Both of these families are designed for low noise detection in the UV region of the electromagnetic spectrum.
The inversion layer structure family exhibit 100% internal quantum efficiency. Offering high shunt resistance, low noise and high breakdown voltages, this family of photodiodes are idea for low intensity light measurements.
Photodiodes with the planar diffused structure offer a lower capacitance and higher response time compared to the inversion later family. They also show linearity of photocurrent up to higher light input power compared to the inversion layer photodiodes.
Suitable applications for the UV Enhanced series includes; pollution monitoring, medical instrumentation, UV exposure meters, spectroscopy, water purification and fluorescence.
Features of the UV Enhanced series:
Inversion layers or planar diffused silicon photodiodes
Excellent UV response
Photodiodes, OSI Optoelectronics
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