STMicroelectronics Type N-Channel MOSFET, 120 A, 60 V Enhancement, 3-Pin TO-220
- RS Stock No.:
- 920-8751
- Mfr. Part No.:
- STP260N6F6
- Manufacturer:
- STMicroelectronics
This image is representative of the product range
Bulk discount available
Subtotal (1 tube of 50 units)*
PHP18,169.40
(exc. VAT)
PHP20,349.75
(inc. VAT)
FREE delivery for orders over ₱3,000.00
Temporarily out of stock
- Shipping from January 18, 2027
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per Unit | Per Tube* |
|---|---|---|
| 50 - 50 | PHP363.388 | PHP18,169.40 |
| 100 - 150 | PHP354.304 | PHP17,715.20 |
| 200 - 450 | PHP345.446 | PHP17,272.30 |
| 500 - 950 | PHP336.81 | PHP16,840.50 |
| 1000 + | PHP328.39 | PHP16,419.50 |
*price indicative
- RS Stock No.:
- 920-8751
- Mfr. Part No.:
- STP260N6F6
- Manufacturer:
- STMicroelectronics
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | STMicroelectronics | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 120A | |
| Maximum Drain Source Voltage Vds | 60V | |
| Package Type | TO-220 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 3mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 300W | |
| Typical Gate Charge Qg @ Vgs | 183nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Forward Voltage Vf | 1.1V | |
| Maximum Operating Temperature | 175°C | |
| Length | 10.4mm | |
| Standards/Approvals | No | |
| Height | 15.75mm | |
| Width | 4.6 mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand STMicroelectronics | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 120A | ||
Maximum Drain Source Voltage Vds 60V | ||
Package Type TO-220 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 3mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 300W | ||
Typical Gate Charge Qg @ Vgs 183nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Forward Voltage Vf 1.1V | ||
Maximum Operating Temperature 175°C | ||
Length 10.4mm | ||
Standards/Approvals No | ||
Height 15.75mm | ||
Width 4.6 mm | ||
Automotive Standard No | ||
N-Channel STripFET™ DeepGate™, STMicroelectronics
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Related links
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