Infineon LogicFET Type N-Channel MOSFET, 130 A, 40 V Enhancement, 3-Pin TO-220
- RS Stock No.:
- 919-4943
- Mfr. Part No.:
- IRL1004PBF
- Manufacturer:
- Infineon
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PHP5,702.60
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PHP6,386.90
(inc. VAT)
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Units | Per Unit | Per Tube* |
|---|---|---|
| 50 - 50 | PHP114.052 | PHP5,702.60 |
| 100 - 150 | PHP108.546 | PHP5,427.30 |
| 200 - 450 | PHP105.911 | PHP5,295.55 |
| 500 - 950 | PHP104.292 | PHP5,214.60 |
| 1000 + | PHP103.19 | PHP5,159.50 |
*price indicative
- RS Stock No.:
- 919-4943
- Mfr. Part No.:
- IRL1004PBF
- Manufacturer:
- Infineon
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 130A | |
| Maximum Drain Source Voltage Vds | 40V | |
| Package Type | TO-220 | |
| Series | LogicFET | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 7mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 100nC | |
| Maximum Power Dissipation Pd | 200W | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 1.3V | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | No | |
| Length | 10.54mm | |
| Height | 8.77mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 130A | ||
Maximum Drain Source Voltage Vds 40V | ||
Package Type TO-220 | ||
Series LogicFET | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 7mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 100nC | ||
Maximum Power Dissipation Pd 200W | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 1.3V | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals No | ||
Length 10.54mm | ||
Height 8.77mm | ||
Automotive Standard No | ||
- COO (Country of Origin):
- CN
Infineon LogicFET Series MOSFET, 130A Maximum Continuous Drain Current, 200W Maximum Power Dissipation - IRL1004PBF
This high-performance MOSFET employs Si technology and is designed for efficient power management in a variety of electronic applications. The enhancement mode N-channel structure ensures effective operation, making it suitable for modern automation and electrical systems, particularly in high power circuits.
Features & Benefits
• Continuous drain current capacity of up to 130A
• Maximum drain-source voltage of 40V ensuring robust performance
• Low Rds(on) of 7mΩ to decrease heat generation
• High thermal stability with a maximum operating temperature of +175°C
• Compact TO-220AB package allows for versatile mounting options
Applications
• High-efficiency power supply circuits
• Automotive and industrial automation systems
• Energy management and conversion systems
How does the Rds(on) contribute to the efficiency of the device?
A low Rds(on) of 7mΩ minimises power losses during operation, thereby reducing heat and enhancing overall efficiency in power applications.
What is the significance of the operating temperature range?
The device is capable of functioning within a wide temperature range of -55°C to +175°C, ensuring dependable performance across diverse environmental conditions and minimising the risk of thermal failure.
Can it be used for high-frequency switching applications?
Yes, it is designed for fast switching capabilities, making it suitable for high-frequency operations, thus improving performance in communication and control systems.
What considerations should be taken for installation?
Utilise appropriate thermal management techniques, such as a suitable heatsink, as high-power devices need effective heat dissipation to maintain functionality and reliability.
What happens if the gate-source voltage exceeds the maximum rating?
Exceeding the maximum gate-source voltage may result in device failure, so it is vital to adhere to the specified limits to ensure longevity and prevent damage.
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