Name: Infineon LogicFET N-Channel MOSFET, 10 A, 100 V, 3-Pin TO-220AB IRL520NPBF
Brand: Infineon
SKU: 919-4870
Price: 51.74 PHP
Availability: Discontinued

Specifications

Technical data sheets

Legislation and Compliance

Product Details

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Select all	Attribute	Value
	Brand	Infineon
	Channel Type	N
	Maximum Continuous Drain Current	10 A
	Maximum Drain Source Voltage	100 V
	Series	LogicFET
	Package Type	TO-220AB
	Mounting Type	Through Hole
	Pin Count	3
	Maximum Drain Source Resistance	180 mΩ
	Channel Mode	Enhancement
	Maximum Gate Threshold Voltage	2V
	Minimum Gate Threshold Voltage	1V
	Maximum Power Dissipation	48 W
	Transistor Configuration	Single
	Maximum Gate Source Voltage	-16 V, +16 V
	Transistor Material	Si
	Typical Gate Charge @ Vgs	20 nC @ 5 V
	Maximum Operating Temperature	+175 °C
	Number of Elements per Chip	1
	Height	8.77mm
	Minimum Operating Temperature	-55 °C

	Select all
	Brand Infineon
	Channel Type N
	Maximum Continuous Drain Current 10 A
	Maximum Drain Source Voltage 100 V
	Series LogicFET
	Package Type TO-220AB
	Mounting Type Through Hole
	Pin Count 3
	Maximum Drain Source Resistance 180 mΩ
	Channel Mode Enhancement
	Maximum Gate Threshold Voltage 2V
	Minimum Gate Threshold Voltage 1V
	Maximum Power Dissipation 48 W
	Transistor Configuration Single
	Maximum Gate Source Voltage -16 V, +16 V
	Transistor Material Si
	Typical Gate Charge @ Vgs 20 nC @ 5 V
	Maximum Operating Temperature +175 °C
	Number of Elements per Chip 1
	Height 8.77mm
	Minimum Operating Temperature -55 °C

COO (Country of Origin):: CN

Infineon LogicFET Series MOSFET, 10A Maximum Continuous Drain Current, 48W Maximum Power Dissipation - IRL520NPBF

This MOSFET is designed for various high-power applications. Its N-channel configuration and enhancement mode capability make it suitable for switching and amplification tasks in automation and electrical sectors. With a maximum continuous drain current of 10 A and a maximum drain-source voltage of 100V, it provides consistent performance in demanding environments. The TO-220AB package type facilitates effective thermal management in different mounting situations.

Features & Benefits

• High power dissipation capacity of 48W for robust performance

• Low drain-source resistance of 180mΩ enhances efficiency

• Wide operating temperature range from -55°C to +175°C ensures reliability

• Suitable for through-hole mounting, facilitating easy integration

• Enhanced gate threshold voltage between 1V and 2V optimises control

• Single transistor configuration simplifies design and assembly

Applications

• Utilised in power supply circuits for efficient voltage regulation

• Employed in motor control systems due to its high current capacity

• Applicable in industrial automation for effective switching operations

• Integrated into power management solutions for energy-efficient designs

What type of cooling method is recommended for optimal performance?

Effective heatsinking is essential to maintain operational efficiency and prevent overheating, especially under high load conditions.

Can it be directly replaced with other MOSFETs?

While direct replacements might be possible, it is crucial to consider specifications such as current and voltage ratings, as well as gate drive requirements, to ensure compatibility and functionality.

What is the recommended maximum gate-source voltage?

The maximum gate-source voltage should not exceed -16V to +16V to avoid damage to the device and ensure reliable operation.

How should I handle this MOSFET during installation?

Use electrostatic discharge (ESD) precautions and ensure secure connections to prevent failures or intermittent operation once installed in a circuit.

Is it suitable for high-frequency applications?

This MOSFET is suitable for switching applications, but care should be taken regarding gate drive speed and load conditions to avoid performance degradation at higher frequencies.

Infineon LogicFET N-Channel MOSFET, 10 A, 100 V, 3-Pin TO-220AB IRL520NPBF