Infineon HEXFET Type N-Channel MOSFET, 63 A, 100 V Enhancement, 3-Pin TO-252 IRFR4510TRPBF
- RS Stock No.:
- 915-5011
- Mfr. Part No.:
- IRFR4510TRPBF
- Manufacturer:
- Infineon
This image is representative of the product range
Bulk discount available
Subtotal (1 pack of 10 units)*
PHP736.96
(exc. VAT)
PHP825.40
(inc. VAT)
FREE delivery for orders over ₱3,000.00
Last RS stock
- 40 left, ready to ship from another location
- Final 7,080 unit(s) shipping from January 02, 2026
Units | Per Unit | Per Pack* |
|---|---|---|
| 10 - 90 | PHP73.696 | PHP736.96 |
| 100 - 490 | PHP71.485 | PHP714.85 |
| 500 - 990 | PHP69.34 | PHP693.40 |
| 1000 - 2490 | PHP67.26 | PHP672.60 |
| 2500 + | PHP65.243 | PHP652.43 |
*price indicative
- RS Stock No.:
- 915-5011
- Mfr. Part No.:
- IRFR4510TRPBF
- Manufacturer:
- Infineon
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 63A | |
| Maximum Drain Source Voltage Vds | 100V | |
| Package Type | TO-252 | |
| Series | HEXFET | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 13.9mΩ | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 1.3V | |
| Maximum Power Dissipation Pd | 143W | |
| Typical Gate Charge Qg @ Vgs | 54nC | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | No | |
| Width | 7.49 mm | |
| Length | 6.73mm | |
| Height | 2.39mm | |
| Distrelec Product Id | 304-44-463 | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 63A | ||
Maximum Drain Source Voltage Vds 100V | ||
Package Type TO-252 | ||
Series HEXFET | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 13.9mΩ | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 1.3V | ||
Maximum Power Dissipation Pd 143W | ||
Typical Gate Charge Qg @ Vgs 54nC | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals No | ||
Width 7.49 mm | ||
Length 6.73mm | ||
Height 2.39mm | ||
Distrelec Product Id 304-44-463 | ||
Automotive Standard No | ||
N-Channel Power MOSFET 100V, Infineon
The Infineon range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages. And form factors that can address almost any board layout and thermal design challenge. Across the range Benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
Related links
- Infineon HEXFET Type N-Channel MOSFET 100 V Enhancement, 3-Pin TO-252
- Infineon HEXFET Type N-Channel MOSFET 100 V Enhancement, 3-Pin IPAK
- Infineon HEXFET Type N-Channel MOSFET 100 V Enhancement, 3-Pin IPAK IRFU4510PBF
- Infineon HEXFET Type N-Channel MOSFET 100 V TO-252
- Infineon HEXFET Type N-Channel MOSFET 100 V TO-252 IRLR3110ZTRLPBF
- Infineon HEXFET Type N-Channel MOSFET 100 V TO-252 IRLR3110ZTRPBF
- Infineon ISZ Type N-Channel MOSFET 100 V Enhancement, 8-Pin PG-TSDSON-8 ISZ113N10NM5LF2ATMA1
- Infineon HEXFET Type N-Channel MOSFET 100 V Enhancement, 3-Pin TO-252