STMicroelectronics N-Channel MOSFET, 45 A, 1200 V Enhancement, 3-Pin Hip-247

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Subtotal 30 units (supplied in a tube)*

PHP49,801.80

(exc. VAT)

PHP55,778.10

(inc. VAT)

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Last RS stock
  • Final 290 unit(s), ready to ship from another location

Units
Per Unit
30 - 149PHP1,660.06
150 - 299PHP1,610.25
300 - 599PHP1,561.95
600 +PHP1,515.10

*price indicative

Packaging Options:
RS Stock No.:
907-4741P
Mfr. Part No.:
SCT30N120
Manufacturer:
STMicroelectronics
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Brand

STMicroelectronics

Product Type

MOSFET

Channel Type

N

Maximum Continuous Drain Current Id

45A

Maximum Drain Source Voltage Vds

1200V

Package Type

Hip-247

Mount Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance Rds

100mΩ

Channel Mode

Enhancement

Maximum Gate Source Voltage Vgs

-10V, +25V

Typical Gate Charge Qg @ Vgs

105nC

Minimum Operating Temperature

-55°C

Maximum Power Dissipation Pd

270W

Forward Voltage Vf

3.5V

Maximum Operating Temperature

200°C

Height

20.15mm

Length

15.75mm

Width

5.15mm

Standards/Approvals

No

Automotive Standard

No

N-Channel Silicon Carbide (SiC) MOSFET, STMicroelectronics


Silicon carbide (SiC) MOSFETs feature very low static drain-source on-resistance for the 1200V rating combined with excellent switching performance, translating into more efficient and Compact systems.

MOSFET Transistors, STMicroelectronics


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