Infineon OptiMOS FD Type N-Channel MOSFET, 61 A, 250 V Enhancement, 3-Pin TO-220 IPP220N25NFDAKSA1

RS Stock No.:: 898-6983
Mfr. Part No.:: IPP220N25NFDAKSA1
Manufacturer:: Infineon

Infineon OptiMOS FD Type N-Channel MOSFET, 61 A, 250 V Enhancement, 3-Pin TO-220 IPP220N25NFDAKSA1

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PHP647.06

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PHP724.70

(inc. VAT)

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In Stock

470 unit(s) ready to ship from another location

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Units	Per Unit	Per Pack*
2 - 8	PHP323.53	PHP647.06
10 - 38	PHP303.27	PHP606.54
40 - 98	PHP303.01	PHP606.02
100 - 198	PHP299.67	PHP599.34
200 +	PHP296.845	PHP593.69

*price indicative

RS Stock No.:: 898-6983
Mfr. Part No.:: IPP220N25NFDAKSA1
Manufacturer:: Infineon

Specifications

Technical data sheets

Legislation and Compliance

Product Details

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	Infineon
	Channel Type	Type N
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	61A
	Maximum Drain Source Voltage Vds	250V
	Package Type	TO-220
	Series	OptiMOS FD
	Mount Type	Through Hole
	Pin Count	3
	Maximum Drain Source Resistance Rds	22mΩ
	Channel Mode	Enhancement
	Minimum Operating Temperature	-55°C
	Typical Gate Charge Qg @ Vgs	65nC
	Maximum Gate Source Voltage Vgs	20 V
	Maximum Power Dissipation Pd	300W
	Forward Voltage Vf	1.2V
	Maximum Operating Temperature	175°C
	Length	10.36mm
	Standards/Approvals	No
	Height	15.95mm
	Width	4.57 mm
	Automotive Standard	No

	Select all
	Brand Infineon
	Channel Type Type N
	Product Type MOSFET
	Maximum Continuous Drain Current Id 61A
	Maximum Drain Source Voltage Vds 250V
	Package Type TO-220
	Series OptiMOS FD
	Mount Type Through Hole
	Pin Count 3
	Maximum Drain Source Resistance Rds 22mΩ
	Channel Mode Enhancement
	Minimum Operating Temperature -55°C
	Typical Gate Charge Qg @ Vgs 65nC
	Maximum Gate Source Voltage Vgs 20 V
	Maximum Power Dissipation Pd 300W
	Forward Voltage Vf 1.2V
	Maximum Operating Temperature 175°C
	Length 10.36mm
	Standards/Approvals No
	Height 15.95mm
	Width 4.57 mm
	Automotive Standard No

RoHS Status: Not Applicable

Infineon OptiMOS FD Series MOSFET, 61A Maximum Continuous Drain Current, 300W Maximum Power Dissipation - IPP220N25NFDAKSA1

This MOSFET is designed for high-performance applications that require efficient power management. With its N-channel enhancement mode configuration and robust specifications, it plays an essential role in sectors such as automation, electronics, and electrical systems. It offers a maximum continuous drain current of 61A and a breakdown voltage of 250V, providing reliability and thermal performance in challenging environments.

Features & Benefits

• Low on-resistance increases energy efficiency during operation

• High current capability supports a range of applications

• Elevated operating temperature of up to +175°C enhances versatility

• Optimised for hard commutation, contributing to ruggedness and durability

• Compliant with RoHS and halogen-free regulations, promoting eco-friendliness

• Efficient gate charge characteristics ensure effective switching

Applications

• Used in power conversion circuits for automation equipment

• Ideal for high-power motor drives in industrial machinery

• Commonly applied in power supplies for electronic devices

• Suitable for automotive power management systems

• Employed in renewable energy systems for inverters

What is the maximum power dissipation capacity?

It can handle a maximum power dissipation of 300W, ensuring performance in high load scenarios.

How does it perform in high-temperature environments?

This MOSFET can operate continuously at temperatures reaching +175°C, suitable for extreme conditions.

Can it handle pulsed drain currents?

Yes, the device can manage pulsed drain currents up to 244A, beneficial for transient load applications.

What is the significance of its low Rds(on) value?

A low Rds(on) of 22mΩ reduces power loss and increases efficiency during operation, Crucial for energy-sensitive applications.

How should it be mounted for optimal performance?

The device features a TO-220 package and is designed for through-hole mounting, which aids thermal management in circuit designs.