STMicroelectronics STripFET Type P-Channel MOSFET, 3 A, 60 V Enhancement, 4-Pin SOT-223 STN3P6F6
- RS Stock No.:
- 877-2949
- Mfr. Part No.:
- STN3P6F6
- Manufacturer:
- STMicroelectronics
This image is representative of the product range
Bulk discount available
Subtotal (1 pack of 10 units)*
PHP439.04
(exc. VAT)
PHP491.72
(inc. VAT)
FREE delivery for orders over ₱3,000.00
In Stock
- 2,530 unit(s) ready to ship from another location
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per Unit | Per Pack* |
|---|---|---|
| 10 - 10 | PHP43.904 | PHP439.04 |
| 20 - 40 | PHP42.587 | PHP425.87 |
| 50 - 90 | PHP41.31 | PHP413.10 |
| 100 - 190 | PHP40.071 | PHP400.71 |
| 200 + | PHP38.867 | PHP388.67 |
*price indicative
- RS Stock No.:
- 877-2949
- Mfr. Part No.:
- STN3P6F6
- Manufacturer:
- STMicroelectronics
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | STMicroelectronics | |
| Product Type | MOSFET | |
| Channel Type | Type P | |
| Maximum Continuous Drain Current Id | 3A | |
| Maximum Drain Source Voltage Vds | 60V | |
| Series | STripFET | |
| Package Type | SOT-223 | |
| Mount Type | Surface | |
| Pin Count | 4 | |
| Maximum Drain Source Resistance Rds | 160mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 6.4nC | |
| Maximum Power Dissipation Pd | 2.6W | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | -1.1V | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | No | |
| Height | 1.8mm | |
| Width | 3.7 mm | |
| Length | 6.7mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand STMicroelectronics | ||
Product Type MOSFET | ||
Channel Type Type P | ||
Maximum Continuous Drain Current Id 3A | ||
Maximum Drain Source Voltage Vds 60V | ||
Series STripFET | ||
Package Type SOT-223 | ||
Mount Type Surface | ||
Pin Count 4 | ||
Maximum Drain Source Resistance Rds 160mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 6.4nC | ||
Maximum Power Dissipation Pd 2.6W | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf -1.1V | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals No | ||
Height 1.8mm | ||
Width 3.7 mm | ||
Length 6.7mm | ||
Automotive Standard No | ||
- COO (Country of Origin):
- CN
P-Channel STripFET™ Power MOSFET, STMicroelectronics
STripFET™ MOSFETs with a wide breakdown voltage range offer ultra-low gate charge and low on-resistance.
MOSFET Transistors, STMicroelectronics
Related links
- STMicroelectronics STripFET Type P-Channel MOSFET 60 V Enhancement, 4-Pin SOT-223
- STMicroelectronics STripFET Type N-Channel MOSFET 30 V Enhancement, 4-Pin SOT-223
- STMicroelectronics STripFET Type N-Channel MOSFET 60 V Enhancement, 4-Pin SOT-223
- STMicroelectronics STripFET Type N-Channel MOSFET 100 V Enhancement, 4-Pin SOT-223
- STMicroelectronics STripFET Type N-Channel MOSFET 30 V Enhancement, 4-Pin SOT-223 STN4NF03L
- STMicroelectronics STripFET Type N-Channel MOSFET 60 V Enhancement, 4-Pin SOT-223 STN3NF06L
- STMicroelectronics STripFET Type N-Channel MOSFET 100 V Enhancement, 4-Pin SOT-223 STN2NF10
- onsemi QFET Type P-Channel MOSFET 100 V Enhancement, 4-Pin SOT-223 FQT5P10TF
