IXYS HiperFET, Q3-Class N-Channel MOSFET, 30 A, 1000 V, 24-Pin SMPD MMIX1F44N100Q3
- RS Stock No.:
- 875-2516P
- Mfr. Part No.:
- MMIX1F44N100Q3
- Manufacturer:
- IXYS
This image is representative of the product range
Bulk discount available
Subtotal 10 units (supplied in a tube)*
PHP15,873.50
(exc. VAT)
PHP17,778.30
(inc. VAT)
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Units | Per Unit |
|---|---|
| 10 - 49 | PHP1,587.35 |
| 50 - 99 | PHP1,443.73 |
| 100 - 249 | PHP1,414.89 |
| 250 + | PHP1,400.47 |
*price indicative
- RS Stock No.:
- 875-2516P
- Mfr. Part No.:
- MMIX1F44N100Q3
- Manufacturer:
- IXYS
Specifications
Technical data sheets
Legislation and Compliance
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | IXYS | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 30 A | |
| Maximum Drain Source Voltage | 1000 V | |
| Package Type | SMPD | |
| Series | HiperFET, Q3-Class | |
| Mounting Type | Surface Mount | |
| Pin Count | 24 | |
| Maximum Drain Source Resistance | 245 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 6.5V | |
| Maximum Power Dissipation | 694 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | -40 V, +40 V | |
| Transistor Material | Si | |
| Width | 23.25mm | |
| Length | 25.25mm | |
| Number of Elements per Chip | 1 | |
| Typical Gate Charge @ Vgs | 264 nC @ 10 V | |
| Maximum Operating Temperature | +150 °C | |
| Height | 5.7mm | |
| Minimum Operating Temperature | -55 °C | |
| Forward Diode Voltage | 1.4V | |
| Select all | ||
|---|---|---|
Brand IXYS | ||
Channel Type N | ||
Maximum Continuous Drain Current 30 A | ||
Maximum Drain Source Voltage 1000 V | ||
Package Type SMPD | ||
Series HiperFET, Q3-Class | ||
Mounting Type Surface Mount | ||
Pin Count 24 | ||
Maximum Drain Source Resistance 245 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 6.5V | ||
Maximum Power Dissipation 694 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -40 V, +40 V | ||
Transistor Material Si | ||
Width 23.25mm | ||
Length 25.25mm | ||
Number of Elements per Chip 1 | ||
Typical Gate Charge @ Vgs 264 nC @ 10 V | ||
Maximum Operating Temperature +150 °C | ||
Height 5.7mm | ||
Minimum Operating Temperature -55 °C | ||
Forward Diode Voltage 1.4V | ||