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    N-Channel MOSFET, 250 A, 40 V, 3-Pin D2PAK Infineon IRFS7437TRLPBF

    RS Stock No.:
    872-4206P
    Mfr. Part No.:
    IRFS7437TRLPBF
    Manufacturer:
    Infineon
    Infineon

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    3190 In Global stock for delivery NCR Plus within 10 working day(s), rest of PH within 14 working days
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    Price Each (Supplied on a Reel) Quantities below 150 on continuous strip

    PHP108.796

    (exc. VAT)

    PHP121.852

    (inc. VAT)

    unitsPer Unit
    20 - 40PHP108.796
    50 - 90PHP105.532
    100 - 190PHP102.366
    200 +PHP99.294
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    RS Stock No.:
    872-4206P
    Mfr. Part No.:
    IRFS7437TRLPBF
    Manufacturer:
    Infineon

    RoHS Status: Exempt

    Legislation and Compliance

    RoHS Status: Exempt


    Product Details

    N-Channel Power MOSFET 40V, Infineon


    Infineon's range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages and form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.


    MOSFET Transistors, Infineon


    Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

    Specifications

    AttributeValue
    Channel TypeN
    Maximum Continuous Drain Current250 A
    Maximum Drain Source Voltage40 V
    Package TypeD2PAK (TO-263)
    Mounting TypeSurface Mount
    Pin Count3
    Maximum Drain Source Resistance1.8 mΩ
    Channel ModeEnhancement
    Maximum Gate Threshold Voltage3.9V
    Minimum Gate Threshold Voltage2.2V
    Maximum Power Dissipation230 W
    Transistor ConfigurationSingle
    Maximum Gate Source Voltage-20 V, +20 V
    Width9.65mm
    Number of Elements per Chip1
    Length10.67mm
    Maximum Operating Temperature+175 °C
    Transistor MaterialSi
    Typical Gate Charge @ Vgs150 nC @ 10 V
    Height4.83mm
    SeriesHEXFET
    Minimum Operating Temperature-55 °C
    Forward Diode Voltage1.3V
    3190 In Global stock for delivery NCR Plus within 10 working day(s), rest of PH within 14 working days
    Add to Basket
    units

    Added

    Price Each (Supplied on a Reel) Quantities below 150 on continuous strip

    PHP108.796

    (exc. VAT)

    PHP121.852

    (inc. VAT)

    unitsPer Unit
    20 - 40PHP108.796
    50 - 90PHP105.532
    100 - 190PHP102.366
    200 +PHP99.294
    Packaging Options: