N-Channel MOSFET, 2.6 A, 150 V, 3-Pin SOT-223 Infineon IRFL4315TRPBF

RS Stock No.:: 865-5822P
Mfr. Part No.:: IRFL4315TRPBF
Manufacturer:: Infineon

N-Channel MOSFET, 2.6 A, 150 V, 3-Pin SOT-223 Infineon IRFL4315TRPBF

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Units	Per Unit
20 - 40	PHP33.26
50 - 90	PHP29.934
100 - 190	PHP26.941
200 +	PHP24.247

**price indicative

RS Stock No.:: 865-5822P
Mfr. Part No.:: IRFL4315TRPBF
Manufacturer:: Infineon

N-Channel Power MOSFET 150V to 600V, Infineon

Infineon's range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages and form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.

Infineon HEXFET Series MOSFET, 2.6A Maximum Continuous Drain Current, 2.8W Maximum Power Dissipation - IRFL4315TRPBF

This MOSFET is suitable for power applications, delivering solid performance and enhanced reliability in various environments. As a key component in switching applications, it enables efficient control of power delivery. Its surface mount design makes it a good fit for high-performance circuits that require low gate-to-drain charge, minimising switching losses, which is beneficial for users in the automation and electronics industries.

Features & Benefits

• Continuous drain current rating of 2.6A accommodates a range of applications
• Maximum drain-source voltage of 150V facilitates high-power operations
• Low Rds(on) of 185mΩ improves energy efficiency
• Operating temperature range from -55°C to +150°C supports dependable performance
• Gate threshold voltage is optimised for easier circuit design
• Fully characterised avalanche characteristics provide additional protection

Applications

• High-frequency DC-DC converters
• Power management systems for improved efficiency
• Switching power supplies for enhanced performance

What is the significance of the low Rds(on) value?

A low Rds(on) reduces power losses during operation, improving overall efficiency across multiple applications.

How does the wide temperature range affect usage?

The wide operating temperature range ensures reliable performance in extreme conditions, making it suitable for diverse environments.

Can it be used in both high and low-frequency applications?

Yes, it accommodates both high-frequency DC-DC converters and applications requiring low-frequency switching.

What should be considered for installation?

Proper circuit layout and thermal management should be taken into account to optimise performance during installation.

How does the gate threshold voltage impact circuit design?

The gate threshold voltage allows for better control over switching behaviour, facilitating easier design of the driving circuit.

For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

Attribute	Value
Channel Type	N
Maximum Continuous Drain Current	2.6 A
Maximum Drain Source Voltage	150 V
Package Type	SOT-223
Series	HEXFET
Mounting Type	Surface Mount
Pin Count	3
Maximum Drain Source Resistance	185 mΩ
Channel Mode	Enhancement
Maximum Gate Threshold Voltage	5V
Minimum Gate Threshold Voltage	3V
Maximum Power Dissipation	2.8 W
Transistor Configuration	Single
Maximum Gate Source Voltage	-30 V, +30 V
Transistor Material	Si
Number of Elements per Chip	1
Maximum Operating Temperature	+150 °C
Typical Gate Charge @ Vgs	12 nC @ 10 V
Length	6.7mm
Width	3.7mm
Minimum Operating Temperature	-55 °C
Height	1.8mm
Forward Diode Voltage	1.5V