Infineon OptiMOS™ 3 N-Channel MOSFET, 50 A, 60 V, 3-Pin DPAK IPD088N06N3GBTMA1

RS Stock No.:: 827-5081
Mfr. Part No.:: IPD088N06N3GBTMA1
Manufacturer:: Infineon

Infineon OptiMOS™ 3 N-Channel MOSFET, 50 A, 60 V, 3-Pin DPAK IPD088N06N3GBTMA1

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Subtotal (1 pack of 25 units)*

PHP1,685.25

(exc. VAT)

PHP1,887.50

(inc. VAT)

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Units	Per Unit	Per Pack*
25 - 25	PHP67.41	PHP1,685.25
50 - 100	PHP64.027	PHP1,600.68
125 - 225	PHP63.979	PHP1,599.48
250 - 475	PHP51.319	PHP1,282.98
500 +	PHP43.998	PHP1,099.95

*price indicative

RS Stock No.:: 827-5081
Mfr. Part No.:: IPD088N06N3GBTMA1
Manufacturer:: Infineon

Specifications

Technical data sheets

Legislation and Compliance

Product Details

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	Infineon
	Channel Type	N
	Maximum Continuous Drain Current	50 A
	Maximum Drain Source Voltage	60 V
	Package Type	DPAK (TO-252)
	Series	OptiMOS™ 3
	Mounting Type	Surface Mount
	Pin Count	3
	Maximum Drain Source Resistance	8.8 mΩ
	Channel Mode	Enhancement
	Maximum Gate Threshold Voltage	4V
	Minimum Gate Threshold Voltage	2V
	Maximum Power Dissipation	71 W
	Transistor Configuration	Single
	Maximum Gate Source Voltage	-20 V, +20 V
	Number of Elements per Chip	1
	Transistor Material	Si
	Typical Gate Charge @ Vgs	36 nC @ 10 V
	Length	6.73mm
	Width	6.22mm
	Maximum Operating Temperature	+175 °C
	Height	2.41mm
	Minimum Operating Temperature	-55 °C

	Select all
	Brand Infineon
	Channel Type N
	Maximum Continuous Drain Current 50 A
	Maximum Drain Source Voltage 60 V
	Package Type DPAK (TO-252)
	Series OptiMOS™ 3
	Mounting Type Surface Mount
	Pin Count 3
	Maximum Drain Source Resistance 8.8 mΩ
	Channel Mode Enhancement
	Maximum Gate Threshold Voltage 4V
	Minimum Gate Threshold Voltage 2V
	Maximum Power Dissipation 71 W
	Transistor Configuration Single
	Maximum Gate Source Voltage -20 V, +20 V
	Number of Elements per Chip 1
	Transistor Material Si
	Typical Gate Charge @ Vgs 36 nC @ 10 V
	Length 6.73mm
	Width 6.22mm
	Maximum Operating Temperature +175 °C
	Height 2.41mm
	Minimum Operating Temperature -55 °C

RoHS Status: Not Applicable

Infineon OptiMOS™3 Power MOSFETs, 60 to 80V

OptiMOS™ products are available in high performance packages to tackle the most challenging applications giving full flexibility in limited spaces. These Infineon products are designed to meet and exceed the energy efficiency and power density requirements of the sharpened next generation voltage regulation standards in computing applications.

Fast switching MOSFET for SMPS
Optimized technology for DC/DC converters
Qualified according to JEDEC1) for target applications
N-channel, logic level
Excellent gate charge x R DS(on) product (FOM)
Very low on-resistance R DS(on)
Pb-free plating

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.