N-Channel MOSFET, 43 A, 60 V, 3-Pin D2PAK Infineon IRFS3806TRLPBF

RS Stock No.:: 827-4101
Mfr. Part No.:: IRFS3806TRLPBF
Manufacturer:: Infineon

N-Channel MOSFET, 43 A, 60 V, 3-Pin D2PAK Infineon IRFS3806TRLPBF

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PHP579.60

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PHP649.20

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Units	Per Unit	Per Pack**
10 - 10	PHP57.96	PHP579.60
20 - 40	PHP56.787	PHP567.87
50 - 90	PHP48.813	PHP488.13
100 - 190	PHP47.964	PHP479.64
200 +	PHP35.738	PHP357.38

**price indicative

RS Stock No.:: 827-4101
Mfr. Part No.:: IRFS3806TRLPBF
Manufacturer:: Infineon

N-Channel Power MOSFET 60V to 80V, Infineon

The Infineon range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages. And form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.

Infineon HEXFET Series MOSFET, 43A Maximum Continuous Drain Current, 71W Maximum Power Dissipation - IRFS3806TRLPBF

This MOSFET is crafted for optimal performance in high-efficiency applications. Its enhancement mode configuration is pivotal in power management, driving significant usage across diverse electronic systems. It supports efficient switching and signal amplification, essential for sectors such as automation, electronics, and the electrical and mechanical industries.

Features & Benefits

• High continuous drain current capability of up to 43A
• Efficient operation with a maximum drain-source voltage of 60V
• Low on-resistance reduces power loss
• High-temperature application suitability with a range up to +175°C
• Space-saving surface mount design
• Enhanced ruggedness against dynamic stress for consistent performance

Applications

• Ideal for high-speed power switching scenarios
• Used in uninterruptible power supply systems
• Applicable in synchronous rectification within switched-mode power supplies
• Suitable for hard-switched and high-frequency circuits

What is the maximum gate-to-source voltage?

The maximum gate-to-source voltage for this component is -20V to +20V, allowing flexibility in various circuit designs.

How does the on-resistance affect power dissipation?

Lower on-resistance minimises power dissipation during operation, leading to enhanced efficiency and thermal performance.

What is the typical gate charge required?

The typical gate charge at a gate-source voltage of 10V is 22nC, enabling quick switching transitions.

Is it compatible with surface mount PCB designs?

Yes, the surface mount design is suitable for modern PCB layouts, facilitating integration into compact electronic devices.

What factors should be considered when using the MOSFET in high-temperature applications?

When operating at high temperatures, ensure adequate thermal management is implemented to respect the maximum operating temperature limit of +175°C for reliability.

For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Manufacturer	Infineon
	Channel Type	N
	Maximum Continuous Drain Current	43 A
	Maximum Drain Source Voltage	60 V
	Series	HEXFET
	Package Type	D2PAK (TO-263)
	Mounting Type	Surface Mount
	Pin Count	3
	Maximum Drain Source Resistance	15.8 mΩ
	Channel Mode	Enhancement
	Maximum Gate Threshold Voltage	4V
	Minimum Gate Threshold Voltage	2V
	Maximum Power Dissipation	71 W
	Transistor Configuration	Single
	Maximum Gate Source Voltage	-20 V, +20 V
	Length	10.67mm
	Maximum Operating Temperature	+175 °C
	Number of Elements per Chip	1
	Typical Gate Charge @ Vgs	22 nC @ 10 V
	Transistor Material	Si
	Width	9.65mm
	Height	4.83mm
	Forward Diode Voltage	1.3V
	Minimum Operating Temperature	-55 °C

	Select all
	Manufacturer Infineon
	Channel Type N
	Maximum Continuous Drain Current 43 A
	Maximum Drain Source Voltage 60 V
	Series HEXFET
	Package Type D2PAK (TO-263)
	Mounting Type Surface Mount
	Pin Count 3
	Maximum Drain Source Resistance 15.8 mΩ
	Channel Mode Enhancement
	Maximum Gate Threshold Voltage 4V
	Minimum Gate Threshold Voltage 2V
	Maximum Power Dissipation 71 W
	Transistor Configuration Single
	Maximum Gate Source Voltage -20 V, +20 V
	Length 10.67mm
	Maximum Operating Temperature +175 °C
	Number of Elements per Chip 1
	Typical Gate Charge @ Vgs 22 nC @ 10 V
	Transistor Material Si
	Width 9.65mm
	Height 4.83mm
	Forward Diode Voltage 1.3V
	Minimum Operating Temperature -55 °C