Infineon HEXFET Type N-Channel MOSFET, 43 A, 200 V Enhancement, 3-Pin TO-220 IRFB38N20DPBF

This image is representative of the product range

Bulk discount available

Subtotal (1 pack of 5 units)*

PHP854.56

(exc. VAT)

PHP957.105

(inc. VAT)

Add to Basket
Select or type quantity
In Stock
  • 50 unit(s) ready to ship from another location
  • Plus 20 unit(s) shipping from January 01, 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units
Per Unit
Per Pack*
5 - 10PHP170.912PHP854.56
15 - 20PHP165.786PHP828.93
25 +PHP160.814PHP804.07

*price indicative

Packaging Options:
RS Stock No.:
827-3944
Mfr. Part No.:
IRFB38N20DPBF
Manufacturer:
Infineon
Find similar products by selecting one or more attributes.
Select all

Brand

Infineon

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

43A

Maximum Drain Source Voltage Vds

200V

Package Type

TO-220

Series

HEXFET

Mount Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance Rds

54mΩ

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

60nC

Maximum Power Dissipation Pd

300W

Minimum Operating Temperature

-55°C

Forward Voltage Vf

1.5V

Maximum Gate Source Voltage Vgs

30 V

Maximum Operating Temperature

175°C

Length

10.67mm

Height

16.51mm

Width

4.69 mm

Standards/Approvals

No

Automotive Standard

No

Infineon HEXFET Series MOSFET, 43A Maximum Continuous Drain Current, 300W Maximum Power Dissipation - IRFB38N20DPBF


This MOSFET is designed for high efficiency and effective thermal management in varied applications. Its robust enhancement mode N-channel design allows for considerable continuous drain currents while ensuring low on-resistance. This component is well-suited for power management solutions, enhancing performance and dependability in numerous electronic environments.

Features & Benefits


• Supports a maximum continuous drain current of 43A

• Provides a low Rds(on) of 54mΩ to minimise energy loss

• Capable of withstanding drain-source voltages up to 200V

• High operating temperature tolerance ranging from -55°C to +175°C

• Designed for high-speed switching applications with low gate charge

• Integrates effectively into DC-DC converters and power supplies

Applications


• Utilised in high-frequency DC-DC converters for efficient power management

• Suitable for in plasma display panels

• Employed in industrial automation systems requiring consistent switching

• Used in power supplies where thermal efficiency is crucial

• Ideal for electronic designs needing high performance at elevated temperatures

What kind of currents can it handle in high-temperature applications?


It can manage up to 30A continuous drain current at 100°C, ensuring consistent performance under elevated temperatures.

How does this component perform in high-frequency applications?


It is explicitly designed for high-speed switching, featuring low gate charge and minimal delay times, making it appropriate for such applications.

What packaging options are available for this product?


It is available in a TO-220AB package, facilitating through-hole mounting for easy integration into electronic circuits.

Can this be used in conjunction with other power management devices?


Yes, it is frequently used alongside various DC-DC converters to enhance efficiency in power delivery systems.

What measures should be taken for installation?


Ensure proper thermal management is in place, including heatsinking, to maintain optimal junction temperatures during operation.

Related links