Infineon HEXFET Type N-Channel MOSFET, 43 A, 200 V Enhancement, 3-Pin TO-220 IRFB38N20DPBF
- RS Stock No.:
- 827-3944
- Mfr. Part No.:
- IRFB38N20DPBF
- Manufacturer:
- Infineon
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Subtotal (1 pack of 5 units)*
PHP854.56
(exc. VAT)
PHP957.105
(inc. VAT)
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In Stock
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Units | Per Unit | Per Pack* |
|---|---|---|
| 5 - 10 | PHP170.912 | PHP854.56 |
| 15 - 20 | PHP165.786 | PHP828.93 |
| 25 + | PHP160.814 | PHP804.07 |
*price indicative
- RS Stock No.:
- 827-3944
- Mfr. Part No.:
- IRFB38N20DPBF
- Manufacturer:
- Infineon
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 43A | |
| Maximum Drain Source Voltage Vds | 200V | |
| Package Type | TO-220 | |
| Series | HEXFET | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 54mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 60nC | |
| Maximum Power Dissipation Pd | 300W | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 1.5V | |
| Maximum Gate Source Voltage Vgs | 30 V | |
| Maximum Operating Temperature | 175°C | |
| Length | 10.67mm | |
| Height | 16.51mm | |
| Width | 4.69 mm | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 43A | ||
Maximum Drain Source Voltage Vds 200V | ||
Package Type TO-220 | ||
Series HEXFET | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 54mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 60nC | ||
Maximum Power Dissipation Pd 300W | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 1.5V | ||
Maximum Gate Source Voltage Vgs 30 V | ||
Maximum Operating Temperature 175°C | ||
Length 10.67mm | ||
Height 16.51mm | ||
Width 4.69 mm | ||
Standards/Approvals No | ||
Automotive Standard No | ||
Infineon HEXFET Series MOSFET, 43A Maximum Continuous Drain Current, 300W Maximum Power Dissipation - IRFB38N20DPBF
This MOSFET is designed for high efficiency and effective thermal management in varied applications. Its robust enhancement mode N-channel design allows for considerable continuous drain currents while ensuring low on-resistance. This component is well-suited for power management solutions, enhancing performance and dependability in numerous electronic environments.
Features & Benefits
• Supports a maximum continuous drain current of 43A
• Provides a low Rds(on) of 54mΩ to minimise energy loss
• Capable of withstanding drain-source voltages up to 200V
• High operating temperature tolerance ranging from -55°C to +175°C
• Designed for high-speed switching applications with low gate charge
• Integrates effectively into DC-DC converters and power supplies
Applications
• Utilised in high-frequency DC-DC converters for efficient power management
• Suitable for in plasma display panels
• Employed in industrial automation systems requiring consistent switching
• Used in power supplies where thermal efficiency is crucial
• Ideal for electronic designs needing high performance at elevated temperatures
What kind of currents can it handle in high-temperature applications?
It can manage up to 30A continuous drain current at 100°C, ensuring consistent performance under elevated temperatures.
How does this component perform in high-frequency applications?
It is explicitly designed for high-speed switching, featuring low gate charge and minimal delay times, making it appropriate for such applications.
What packaging options are available for this product?
It is available in a TO-220AB package, facilitating through-hole mounting for easy integration into electronic circuits.
Can this be used in conjunction with other power management devices?
Yes, it is frequently used alongside various DC-DC converters to enhance efficiency in power delivery systems.
What measures should be taken for installation?
Ensure proper thermal management is in place, including heatsinking, to maintain optimal junction temperatures during operation.
Related links
- Infineon HEXFET Type N-Channel MOSFET 200 V TO-263
- Infineon HEXFET Type N-Channel MOSFET 200 V TO-263 IRFS38N20DTRLP
- Infineon HEXFET Type N-Channel MOSFET 150 V Enhancement, 3-Pin TO-220
- Infineon HEXFET Type N-Channel MOSFET 60 V Enhancement, 3-Pin TO-220
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- Infineon HEXFET Type N-Channel MOSFET 60 V Enhancement, 3-Pin TO-220 IRFB3806PBF
- Infineon HEXFET Type N-Channel MOSFET 43 V Enhancement, 3-Pin TO-247
- Infineon HEXFET Type N-Channel MOSFET 43 V Enhancement, 3-Pin TO-247 IRFP3415PBF
